onsemi TRANSISTORS - RF Transistors (BJT) - 2SC5231A-9-TL-E 2SC5231A-9-TL-E

RF Small Signal Bipolar Transistor

Manufacturer: ON Semiconductor
Win Source Part Number: 1004447-2SC5231A-9-TL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 12dB to 8.5dB @ 1GHz
Frequency - Transition: 7GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SMCP
Maximum Current Collector: 70mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 10V
Typical Gain (hFE) (Min): 135 @ 20mA, 5V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

TRANSISTOR RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal Product overview: 2SC5231A-9-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC5231A-9-TL-E can be used for catalog matching and distributor lookup.