onsemi Bipolar RF Transistors 2SC5227A-5-TB-E

Description
RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP
Request a Quote Datasheet
Description
RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Bipolar RF Transistors - 2SC5227A-5-TB-EOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
2SC5227A-5-TB-EOSDKR-ND
Bipolar RF Transistors 2SC5227A-5-TB-EOSDKR-ND
RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP

RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP

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Bipolar RF Transistors - 2SC5227A-5-TB-EOSTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
2SC5227A-5-TB-EOSTR-ND
Bipolar RF Transistors 2SC5227A-5-TB-EOSTR-ND
RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP

RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP

Buy Now Datasheet
Bipolar RF Transistors - 2SC5227A-5-TB-EOSCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
2SC5227A-5-TB-EOSCT-ND
Bipolar RF Transistors 2SC5227A-5-TB-EOSCT-ND
RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP

RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP

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TRANSISTORS - RF Transistors (BJT) - 2SC5227A-5-TB-E - 115797-2SC5227A-5-TB-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - 2SC5227A-5-TB-E
115797-2SC5227A-5-TB-E
TRANSISTORS - RF Transistors (BJT) - 2SC5227A-5-TB-E 115797-2SC5227A-5-TB-E
Manufacturer: ON Semiconductor Win Source Part Number: 115797-2SC5227A-5-TB -E Packaging: Reel - TR Mounting: SMD (SMT) Gain: 12dB Frequency - Transition: 7GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1dB @ 1GHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 3-CP Maximum Current Collector: 70mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 135 @ 20mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 115797-2SC5227A-5-TB-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 12dB
Frequency - Transition: 7GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-CP
Maximum Current Collector: 70mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 10V
Typical Gain (hFE) (Min): 135 @ 20mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

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Bipolar RF Transistors - 2SC5227A-5-TB-E - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
2SC5227A-5-TB-E
Bipolar RF Transistors 2SC5227A-5-TB-E
RF TRANS NPN 10V 7GHZ 3CP

RF TRANS NPN 10V 7GHZ 3CP

Supplier's Site Datasheet
Transistor, Rf, Npn, 10V, 7Ghz, Sc-59; Transistor Polarity Onsemi - 99AC6859 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Rf, Npn, 10V, 7Ghz, Sc-59; Transistor Polarity Onsemi
99AC6859
Transistor, Rf, Npn, 10V, 7Ghz, Sc-59; Transistor Polarity Onsemi 99AC6859
TRANSISTOR, RF, NPN, 10V, 7GHZ, SC-59; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:10V; Transition Frequency ft:7GHz; Power Dissipation Pd:200mW; DC Collector Current:70mA; DC Current Gain hFE:60hFE; RF Transistor RoHS Compliant: Yes

TRANSISTOR, RF, NPN, 10V, 7GHZ, SC-59; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:10V; Transition Frequency ft:7GHz; Power Dissipation Pd:200mW; DC Collector Current:70mA; DC Current Gain hFE:60hFE; RF Transistor RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC5227A-5-TB-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC5227A-5-TB-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC5227A-5-TB-E
RF TRANS NPN 10V 7GHZ 3CP

RF TRANS NPN 10V 7GHZ 3CP

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SC5227A-5-TB-E
Bipolar Transistors - BJT 2SC5227A-5-TB-E
Bipolar Transistors - BJT LOW-NOISE AMPLIFIER

Bipolar Transistors - BJT LOW-NOISE AMPLIFIER

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Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 2SC5227A-5-TB-EOSDKR-ND 115797-2SC5227A-5-TB-E 2SC5227A-5-TB-E 99AC6859 2SC5227A-5-TB-E 2SC5227A-5-TB-E
Product Name Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - 2SC5227A-5-TB-E Bipolar RF Transistors Transistor, Rf, Npn, 10V, 7Ghz, Sc-59; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN NPN; NPN NPN; NPN NPN
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; 3-CP SOT23; TO-236-3, SC-59, SOT-23-3 TO-3
IC(max) 70 milliamps
VCEO 10 volts 10 volts
Power Gain 12 dB
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