onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SC5227A-4-TB-E 2SC5227A-4-TB-E

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1125884-2SC5227A-4-T B-E Packaging: Reel Mounting Style: SMD Gain: 12dB Transistor Type: NPN Frequency - Transition: 7GHz Categories: Discrete Semiconductor Products Supplier Device Package: 3-CP Temperature Range - Operating: 150°C Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Current - Collector (Ic) (Maximum): 70mA Voltage - Collector Emitter Breakdown (Maximum): 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) DC Current Gain (hFE) (Minimum) at Ic, Vce: 90 at 20mA, 5V Maximum Power: 200mW Noise Figure (dB Typ at f): 1dB at 1GHz
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1125884-2SC5227A-4-T B-E Packaging: Reel Mounting Style: SMD Gain: 12dB Transistor Type: NPN Frequency - Transition: 7GHz Categories: Discrete Semiconductor Products Supplier Device Package: 3-CP Temperature Range - Operating: 150°C Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Current - Collector (Ic) (Maximum): 70mA Voltage - Collector Emitter Breakdown (Maximum): 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) DC Current Gain (hFE) (Minimum) at Ic, Vce: 90 at 20mA, 5V Maximum Power: 200mW Noise Figure (dB Typ at f): 1dB at 1GHz
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SC5227A-4-TB-E - 1125884-2SC5227A-4-TB-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SC5227A-4-TB-E
1125884-2SC5227A-4-TB-E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SC5227A-4-TB-E 1125884-2SC5227A-4-TB-E
Manufacturer: ON Semiconductor Win Source Part Number: 1125884-2SC5227A-4-T B-E Packaging: Reel Mounting Style: SMD Gain: 12dB Transistor Type: NPN Frequency - Transition: 7GHz Categories: Discrete Semiconductor Products Supplier Device Package: 3-CP Temperature Range - Operating: 150°C Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Current - Collector (Ic) (Maximum): 70mA Voltage - Collector Emitter Breakdown (Maximum): 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) DC Current Gain (hFE) (Minimum) at Ic, Vce: 90 at 20mA, 5V Maximum Power: 200mW Noise Figure (dB Typ at f): 1dB at 1GHz

Manufacturer: ON Semiconductor
Win Source Part Number: 1125884-2SC5227A-4-TB-E
Packaging: Reel
Mounting Style: SMD
Gain: 12dB
Transistor Type: NPN
Frequency - Transition: 7GHz
Categories: Discrete Semiconductor Products
Supplier Device Package: 3-CP
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Maximum): 70mA
Voltage - Collector Emitter Breakdown (Maximum): 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
DC Current Gain (hFE) (Minimum) at Ic, Vce: 90 at 20mA, 5V
Maximum Power: 200mW
Noise Figure (dB Typ at f): 1dB at 1GHz

Buy Now
Singapore
7GHz 10V 70mA Bipolar Transistor
283-2SC5227A-4-TB-E
7GHz 10V 70mA Bipolar Transistor 283-2SC5227A-4-TB-E
NPN RF Transistor, 7GHz, 10V, 70mA, TO-236-3 Product overview: 2SC5227A-4-TB-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 7GHz, 10V, 70mA. Search-friendly keywords include transistor, BJT, switching, amplification, 7GHz, 10V, 70mA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC5227A-4-TB-E can be used for catalog matching and distributor lookup.

NPN RF Transistor, 7GHz, 10V, 70mA, TO-236-3 Product overview: 2SC5227A-4-TB-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 7GHz, 10V, 70mA. Search-friendly keywords include transistor, BJT, switching, amplification, 7GHz, 10V, 70mA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC5227A-4-TB-E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar RF Transistors - 2SC5227A-4-TB-EOSTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
2SC5227A-4-TB-EOSTR-ND
Bipolar RF Transistors 2SC5227A-4-TB-EOSTR-ND
RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP

RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP

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Bipolar RF Transistors - 2SC5227A-4-TB-EOSCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
2SC5227A-4-TB-EOSCT-ND
Bipolar RF Transistors 2SC5227A-4-TB-EOSCT-ND
RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP

RF Transistor NPN 10V 70mA 7GHz 200mW Surface Mount 3-CP

Buy Now Datasheet
Bipolar RF Transistors - 2SC5227A-4-TB-E - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
2SC5227A-4-TB-E
Bipolar RF Transistors 2SC5227A-4-TB-E
RF TRANS NPN 10V 7GHZ 3CP

RF TRANS NPN 10V 7GHZ 3CP

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SC5227A-4-TB-E
Bipolar Transistors - BJT 2SC5227A-4-TB-E
Bipolar Transistors - BJT ULAHIGH-FREQUENCY TRANSISTOR

Bipolar Transistors - BJT ULAHIGH-FREQUENCY TRANSISTOR

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC5227A-4-TB-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC5227A-4-TB-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC5227A-4-TB-E
RF TRANS NPN 10V 7GHZ 3CP

RF TRANS NPN 10V 7GHZ 3CP

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1125884-2SC5227A-4-TB-E 283-2SC5227A-4-TB-E 2SC5227A-4-TB-EOSTR-ND 2SC5227A-4-TB-E 2SC5227A-4-TB-E 2SC5227A-4-TB-E
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SC5227A-4-TB-E 7GHz 10V 70mA Bipolar Transistor Bipolar RF Transistors Bipolar RF Transistors Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN NPN; NPN
Package Type SOT3; SOT23 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3
Packing Method Tape Reel; Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
TJ 150 C (302 F) -55 C (-67 F) 150 C (302 F)
Power Gain 12 dB 12 dB
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