onsemi 2SC4731S-JKC-AY

NPN silicon transistor for high-current switching applications, rated for 100 V collector-to-emitter voltage and 4 A continuous collector current, housed in an FLP package measuring 10.5 mm × 5.8 mm × 4.5 mm. Collector-to-emitter saturation voltage is ≤400 mV at IC = 2 A and IB = 0.2 A. DC current gain ranges from 140 to 280. Gain-bandwidth product is 130 to 180 MHz. Turn-on time is ≤100 ns and fall time is ≤50 ns. Junction temperature maximum is 150 °C with storage temperature range from -55 °C to +150 °C.