onsemi Single Bipolar Transistors 2SC4135T-E

Description
Bipolar (BJT) Transistor NPN 100V 2A 120MHz 1W Through Hole TP
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Description
Bipolar (BJT) Transistor NPN 100V 2A 120MHz 1W Through Hole TP
Request a Quote Datasheet

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Single Bipolar Transistors - 2SC4135T-EOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SC4135T-EOS-ND
Single Bipolar Transistors 2SC4135T-EOS-ND
Bipolar (BJT) Transistor NPN 100V 2A 120MHz 1W Through Hole TP

Bipolar (BJT) Transistor NPN 100V 2A 120MHz 1W Through Hole TP

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SC4135T-E - 762642-2SC4135T-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC4135T-E
762642-2SC4135T-E
TRANSISTORS - Transistors (BJT) - Single - 2SC4135T-E 762642-2SC4135T-E
Manufacturer: ON Semiconductor Win Source Part Number: 762642-2SC4135T-E Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-251-3 Short Leads, IPak, TO-251AA Power - Max: 1W Transistor Type: NPN Frequency - Transition: 120MHz Family Name: 2SC4135T Categories: Discrete Semiconductor Products Manufacturer Package: TP Current - Collector (Ic) (Maximum): 2A Voltage - Collector Emitter Breakdown (Maximum): 100V Vce Saturation (Maximum) @ Ib, Ic: 400mV @ 100mA, 1A Current - Collector Cutoff (Maximum): 100nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 200 @ 100mA, 5V Estimated EOL Date: 2026 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 762642-2SC4135T-E
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-251-3 Short Leads, IPak, TO-251AA
Power - Max: 1W
Transistor Type: NPN
Frequency - Transition: 120MHz
Family Name: 2SC4135T
Categories: Discrete Semiconductor Products
Manufacturer Package: TP
Current - Collector (Ic) (Maximum): 2A
Voltage - Collector Emitter Breakdown (Maximum): 100V
Vce Saturation (Maximum) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Maximum): 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 200 @ 100mA, 5V
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SC4135T-E
Bipolar Transistors - BJT 2SC4135T-E
Bipolar Transistors - BJT BIP NPN 2A 100V

Bipolar Transistors - BJT BIP NPN 2A 100V

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 2SC4135T-EOS-ND 762642-2SC4135T-E 2SC4135T-E
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SC4135T-E Bipolar Transistors - BJT
Polarity NPN NPN
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