onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 2SC4134T-TL-E

Description
Win Source Part Number: 1037207-2SC4134T-TL- E Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tape & Reel (TR) Standard Package: 700 Mounting: SMD (SMT) Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 1 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Frequency - Transition: 120MHz Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TP-FA Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): 2SC4134S-TL-E; KSH29CTF; NSS1C301ET4G; ZXT1053AKTC; MJD31C-13; ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Mfr: onsemi Base Product Number: 2SC4134
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Description
Win Source Part Number: 1037207-2SC4134T-TL- E Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tape & Reel (TR) Standard Package: 700 Mounting: SMD (SMT) Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 1 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Frequency - Transition: 120MHz Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TP-FA Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): 2SC4134S-TL-E; KSH29CTF; NSS1C301ET4G; ZXT1053AKTC; MJD31C-13; ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Mfr: onsemi Base Product Number: 2SC4134
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Suppliers

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Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1037207-2SC4134T-TL-E - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1037207-2SC4134T-TL-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1037207-2SC4134T-TL-E
Win Source Part Number: 1037207-2SC4134T-TL- E Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tape & Reel (TR) Standard Package: 700 Mounting: SMD (SMT) Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 1 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Frequency - Transition: 120MHz Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TP-FA Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): 2SC4134S-TL-E; KSH29CTF; NSS1C301ET4G; ZXT1053AKTC; MJD31C-13; ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Mfr: onsemi Base Product Number: 2SC4134

Win Source Part Number: 1037207-2SC4134T-TL-E
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tape & Reel (TR)
Standard Package: 700
Mounting: SMD (SMT)
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TP-FA
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): 2SC4134S-TL-E; KSH29CTF; NSS1C301ET4G; ZXT1053AKTC; MJD31C-13;
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: onsemi
Base Product Number: 2SC4134

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC4134T-TL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC4134T-TL-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC4134T-TL-E
TRANS NPN 100V 1A TP-FA

TRANS NPN 100V 1A TP-FA

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SC4134T-TL-E
Bipolar Transistors - BJT 2SC4134T-TL-E
Bipolar Transistors - BJT BIP NPN 1A 100V

Bipolar Transistors - BJT BIP NPN 1A 100V

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1037207-2SC4134T-TL-E 2SC4134T-TL-E 2SC4134T-TL-E
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN
Package Type SOT3
IC(max) 1000 milliamps 1000 milliamps
Power Gain 200 dB
Operating Frequency 120 MHz
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