onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 2SC4134T-TL-E

Description
Win Source Part Number: 1037207-2SC4134T-TL- E Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tape & Reel (TR) Standard Package: 700 Mounting: SMD (SMT) Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 1 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Frequency - Transition: 120MHz Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TP-FA Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): 2SC4134S-TL-E; KSH29CTF; NSS1C301ET4G; ZXT1053AKTC; MJD31C-13; ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Mfr: onsemi Base Product Number: 2SC4134
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Description
Win Source Part Number: 1037207-2SC4134T-TL- E Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tape & Reel (TR) Standard Package: 700 Mounting: SMD (SMT) Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 1 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Frequency - Transition: 120MHz Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TP-FA Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): 2SC4134S-TL-E; KSH29CTF; NSS1C301ET4G; ZXT1053AKTC; MJD31C-13; ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Mfr: onsemi Base Product Number: 2SC4134
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Suppliers

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1037207-2SC4134T-TL-E - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1037207-2SC4134T-TL-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1037207-2SC4134T-TL-E
Win Source Part Number: 1037207-2SC4134T-TL- E Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tape & Reel (TR) Standard Package: 700 Mounting: SMD (SMT) Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 1 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Frequency - Transition: 120MHz Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TP-FA Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): 2SC4134S-TL-E; KSH29CTF; NSS1C301ET4G; ZXT1053AKTC; MJD31C-13; ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Mfr: onsemi Base Product Number: 2SC4134

Win Source Part Number: 1037207-2SC4134T-TL-E
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tape & Reel (TR)
Standard Package: 700
Mounting: SMD (SMT)
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 1 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TP-FA
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): 2SC4134S-TL-E; KSH29CTF; NSS1C301ET4G; ZXT1053AKTC; MJD31C-13;
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: onsemi
Base Product Number: 2SC4134

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SC4134T-TL-E
Bipolar Transistors - BJT 2SC4134T-TL-E
Bipolar Transistors - BJT BIP NPN 1A 100V

Bipolar Transistors - BJT BIP NPN 1A 100V

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC4134T-TL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC4134T-TL-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC4134T-TL-E
TRANS NPN 100V 1A TP-FA

TRANS NPN 100V 1A TP-FA

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1037207-2SC4134T-TL-E 2SC4134T-TL-E 2SC4134T-TL-E
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN
Package Type SOT3
IC(max) 1000 milliamps 1000 milliamps
Power Gain 200 dB
Operating Frequency 120 MHz
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