onsemi Single Bipolar Transistors 2SC4134T-E

Description
Bipolar (BJT) Transistor NPN 100V 1A 120MHz 800mW Through Hole TP
  • Single Bipolar Transistors - 2SC4134T-E-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - 2SC4134T-E - 075491-2SC4134T-E - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC4134T-E - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 100V 1A 120MHz 800mW Through Hole TP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 2SC4134T-E-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SC4134T-E-ND
Single Bipolar Transistors 2SC4134T-E-ND
Bipolar (BJT) Transistor NPN 100V 1A 120MHz 800mW Through Hole TP

Bipolar (BJT) Transistor NPN 100V 1A 120MHz 800mW Through Hole TP

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SC4134T-E - 075491-2SC4134T-E - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC4134T-E
075491-2SC4134T-E
TRANSISTORS - Transistors (BJT) - Single - 2SC4134T-E 075491-2SC4134T-E
Manufacturer: ON Semiconductor Win Source Part Number: 075491-2SC4134T-E Packaging: Bulk Mounting: Through Hole Frequency - Transition: 120MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TP Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 400mV @ 40mA, 400mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 200 @ 100mA, 5V Maximum Power Dissipation: 800mW Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 075491-2SC4134T-E
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 120MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TP
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 400mV @ 40mA, 400mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 100mA, 5V
Maximum Power Dissipation: 800mW
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC4134T-E - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC4134T-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC4134T-E
TRANS NPN 100V 1A TP

TRANS NPN 100V 1A TP

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SC4134T-E
Bipolar Transistors - BJT 2SC4134T-E
Bipolar Transistors - BJT BIP NPN 1A 100V

Bipolar Transistors - BJT BIP NPN 1A 100V

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 2SC4134T-E-ND 075491-2SC4134T-E 2SC4134T-E 2SC4134T-E
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SC4134T-E Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN NPN; NPN
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