onsemi 2SC4107M-TON

NPN triple diffused planar silicon transistor for 400 V/10 A switching regulator applications in a TO-220AB package, with a collector-to-emitter voltage rating of 400 V, collector current of 10 A, and collector dissipation of 60 W at Tc=25°C. It features high breakdown voltage, high-speed switching, and wide safe operating area, with a junction temperature rating of 150°C and storage temperature range of -55°C to +150°C. The device meets SANYO's MBIT process standards and is qualified for industrial applications.