onsemi 2SC4002E

NPN silicon transistor for high-voltage driver applications, packaged in a 3-pin case with dimensions of 6.0 mm length, 5.0 mm width, and 4.0 mm height, featuring a collector-to-base voltage rating of 400 V, collector-to-emitter voltage of 400 V, collector current of 200 mA, and power dissipation of 600 mW. The device exhibits a DC current gain (hFE) range of 100 to 200 for the E bin, a gain-bandwidth product of 70 MHz, and a collector-to-emitter saturation voltage of 0.6 V at IC=50 mA and IB=5 mA. Junction temperature rating is 150 °C, with storage temperature ranging from -55 °C to +150 °C.