onsemi Single Bipolar Transistors 2SC3951E

Description
POWER BIPOLAR TRANSISTOR NPN
Description
POWER BIPOLAR TRANSISTOR NPN
Datasheet
Datasheet Summary
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The 2SC3951 is an NPN epitaxial planar silicon transistor designed for high-definition CRT display video output applications. It features a gain-bandwidth product of 600 MHz, a collector-to-emitter breakdown voltage of 70 V minimum, and a reverse transfer capacitance of 1.9 pF. The device is packaged in a TO-126ML case with dimensions of 8.0 mm × 4.0 mm × 5.7 mm and is rated for a maximum collector current of 300 mA and a collector dissipation of 1.3 W at ambient conditions. It operates with a maximum junction temperature of 150°C and meets AEC-Q200 qualification standards. The 2SC3951E variant is classified with an hFE range of 100 to 200 at IC = 50 mA.

Datasheet Summary
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The 2SC3951 is an NPN epitaxial planar silicon transistor designed for high-definition CRT display video output applications. It features a gain-bandwidth product of 600 MHz, a collector-to-emitter breakdown voltage of 70 V minimum, and a reverse transfer capacitance of 1.9 pF. The device is packaged in a TO-126ML case with dimensions of 8.0 mm × 4.0 mm × 5.7 mm and is rated for a maximum collector current of 300 mA and a collector dissipation of 1.3 W at ambient conditions. It operates with a maximum junction temperature of 150°C and meets AEC-Q200 qualification standards. The 2SC3951E variant is classified with an hFE range of 100 to 200 at IC = 50 mA.

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Single Bipolar Transistors - 2SC3951E - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
2SC3951E
Single Bipolar Transistors 2SC3951E
POWER BIPOLAR TRANSISTOR NPN

POWER BIPOLAR TRANSISTOR NPN

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Technical Specifications

  ODG (Origin Data Global)
Product Category Bipolar RF Transistors
Product Number 2SC3951E
Product Name Single Bipolar Transistors
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