onsemi 2SC3752M-CB11

Description
Bipolar Transistor, NPN 3A 800V
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Description
Bipolar Transistor, NPN 3A 800V
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Datasheet
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NPN silicon transistor for switching regulator applications, rated for 800 V collector-to-emitter voltage and 3 A continuous collector current, packaged in a TO-220ML micaless case. It features high breakdown voltage, high-speed switching, wide avalanche safe operating area, and operates with a maximum junction temperature of 150°C. The device meets no specified industry standards beyond generalized reliability claims.

Datasheet Summary
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NPN silicon transistor for switching regulator applications, rated for 800 V collector-to-emitter voltage and 3 A continuous collector current, packaged in a TO-220ML micaless case. It features high breakdown voltage, high-speed switching, wide avalanche safe operating area, and operates with a maximum junction temperature of 150°C. The device meets no specified industry standards beyond generalized reliability claims.

Suppliers

Company
Product
Description
Supplier Links
 - 2SC3752M-CB11 - Rochester Electronics
Newburyport, MA, United States
Bipolar Transistor, NPN 3A 800V

Bipolar Transistor, NPN 3A 800V

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Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number 2SC3752M-CB11
Polarity NPN
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