onsemi 2SC3708S

Description
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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Description
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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Datasheet
Datasheet Summary
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NPN silicon transistor for low-frequency driver applications, packaged in TO-92 with a collector-to-emitter voltage rating of 80 V, collector current of 500 mA, and collector dissipation of 600 mW. Features a minimum dc current gain of 140 at 50 mA collector current, gain-bandwidth product of 120 MHz, and collector-to-emitter saturation voltage of 0.16 V at 400 mA collector current. Operates within a junction temperature range of -55°C to 150°C.

Datasheet Summary
Powered by GS/AI

NPN silicon transistor for low-frequency driver applications, packaged in TO-92 with a collector-to-emitter voltage rating of 80 V, collector current of 500 mA, and collector dissipation of 600 mW. Features a minimum dc current gain of 140 at 50 mA collector current, gain-bandwidth product of 120 MHz, and collector-to-emitter saturation voltage of 0.16 V at 400 mA collector current. Operates within a junction temperature range of -55°C to 150°C.

Suppliers

Company
Product
Description
Supplier Links
 - 2SC3708S - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number 2SC3708S
Polarity NPN
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