onsemi TRANSISTORS - Transistors (BJT) - Single - 2SC3649S-TD-E 2SC3649S-TD-E

Description
Manufacturer: ON Semiconductor Win Source Part Number: 096361-2SC3649S-TD-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 120MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PCP Maximum Current Collector: 1.5A VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 450mV @ 50mA, 500mA Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 100 @ 100mA, 5V Maximum Power Dissipation: 500mW Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors (BJT) - Single - 2SC3649S-TD-E - 096361-2SC3649S-TD-E - Win Source Electronics
    Win Source Electronics
  • Single Bipolar Transistors - 2SC3649S-TD-EOSDKR-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - 2SC3649S-TD-EOSCT-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - 2SC3649S-TD-EOSTR-ND - DigiKey
    DigiKey
  • Single Bipolar Transistors - 2SC3649S-TD-E - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Transistor, Npn, 160V, 1.5A, Sot-89; Transistor Polarity Onsemi - 31AC2708 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC3649S-TD-E - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 096361-2SC3649S-TD-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 120MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PCP Maximum Current Collector: 1.5A VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 450mV @ 50mA, 500mA Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 100 @ 100mA, 5V Maximum Power Dissipation: 500mW Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2SC3649S-TD-E - 096361-2SC3649S-TD-E - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC3649S-TD-E
096361-2SC3649S-TD-E
TRANSISTORS - Transistors (BJT) - Single - 2SC3649S-TD-E 096361-2SC3649S-TD-E
Manufacturer: ON Semiconductor Win Source Part Number: 096361-2SC3649S-TD-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 120MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PCP Maximum Current Collector: 1.5A VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 450mV @ 50mA, 500mA Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 100 @ 100mA, 5V Maximum Power Dissipation: 500mW Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 096361-2SC3649S-TD-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 120MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PCP
Maximum Current Collector: 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 160V
Max Vce (sat): 450mV @ 50mA, 500mA
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 100 @ 100mA, 5V
Maximum Power Dissipation: 500mW
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single Bipolar Transistors - 2SC3649S-TD-EOSDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SC3649S-TD-EOSDKR-ND
Single Bipolar Transistors 2SC3649S-TD-EOSDKR-ND
Bipolar (BJT) Transistor NPN 160V 1.5A 120MHz 500mW Surface Mount PCP

Bipolar (BJT) Transistor NPN 160V 1.5A 120MHz 500mW Surface Mount PCP

Buy Now Datasheet
Single Bipolar Transistors - 2SC3649S-TD-EOSCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SC3649S-TD-EOSCT-ND
Single Bipolar Transistors 2SC3649S-TD-EOSCT-ND
Bipolar (BJT) Transistor NPN 160V 1.5A 120MHz 500mW Surface Mount PCP

Bipolar (BJT) Transistor NPN 160V 1.5A 120MHz 500mW Surface Mount PCP

Buy Now Datasheet
Single Bipolar Transistors - 2SC3649S-TD-EOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SC3649S-TD-EOSTR-ND
Single Bipolar Transistors 2SC3649S-TD-EOSTR-ND
Bipolar (BJT) Transistor NPN 160V 1.5A 120MHz 500mW Surface Mount PCP

Bipolar (BJT) Transistor NPN 160V 1.5A 120MHz 500mW Surface Mount PCP

Buy Now Datasheet
Single Bipolar Transistors - 2SC3649S-TD-E - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
2SC3649S-TD-E
Single Bipolar Transistors 2SC3649S-TD-E
TRANS NPN 160V 1.5A PCP

TRANS NPN 160V 1.5A PCP

Supplier's Site Datasheet
Transistor, Npn, 160V, 1.5A, Sot-89; Transistor Polarity Onsemi - 31AC2708 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor, Npn, 160V, 1.5A, Sot-89; Transistor Polarity Onsemi
31AC2708
Transistor, Npn, 160V, 1.5A, Sot-89; Transistor Polarity Onsemi 31AC2708
TRANSISTOR, NPN, 160V, 1.5A, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:120MHz; Power Dissipation Pd:1.5W; DC Collector Current:1.5A; DC Current Gain hFE:140hFE; Transistor Case RoHS Compliant: Yes

TRANSISTOR, NPN, 160V, 1.5A, SOT-89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency ft:120MHz; Power Dissipation Pd:1.5W; DC Collector Current:1.5A; DC Current Gain hFE:140hFE; Transistor Case RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SC3649S-TD-E
Bipolar Transistors - BJT 2SC3649S-TD-E
Bipolar Transistors - BJT BIP NPN 1.5A 160V

Bipolar Transistors - BJT BIP NPN 1.5A 160V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC3649S-TD-E - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC3649S-TD-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC3649S-TD-E
TRANS NPN 160V 1.5A PCP

TRANS NPN 160V 1.5A PCP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 096361-2SC3649S-TD-E 2SC3649S-TD-EOSDKR-ND 2SC3649S-TD-E 31AC2708 2SC3649S-TD-E 2SC3649S-TD-E
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SC3649S-TD-E Single Bipolar Transistors Single Bipolar Transistors Transistor, Npn, 160V, 1.5A, Sot-89; Transistor Polarity Onsemi Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN NPN; NPN NPN
Package Type SOT3; PCP TO-243AA TO-243AA TO-3; SOT89
IC(max) 1500 milliamps 1500 milliamps
VCEO 160 volts 160 volts
Operating Frequency 120 MHz
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