onsemi TRANSISTORS - Transistors (BJT) - Single - 2SC3646T-P-TD-E 2SC3646T-P-TD-E

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1004380-2SC3646T-P-T D-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 120MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Case / Package: PCP Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 400mV @ 40mA, 400mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 200 @ 100mA, 5V Maximum Power Dissipation: 500mW Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors (BJT) - Single - 2SC3646T-P-TD-E - 1004380-2SC3646T-P-TD-E - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC3646T-P-TD-E - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1004380-2SC3646T-P-T D-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 120MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Case / Package: PCP Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 400mV @ 40mA, 400mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 200 @ 100mA, 5V Maximum Power Dissipation: 500mW Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors (BJT) - Single - 2SC3646T-P-TD-E - 1004380-2SC3646T-P-TD-E - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC3646T-P-TD-E
1004380-2SC3646T-P-TD-E
TRANSISTORS - Transistors (BJT) - Single - 2SC3646T-P-TD-E 1004380-2SC3646T-P-TD-E
Manufacturer: ON Semiconductor Win Source Part Number: 1004380-2SC3646T-P-T D-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 120MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Case / Package: PCP Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 400mV @ 40mA, 400mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 200 @ 100mA, 5V Maximum Power Dissipation: 500mW Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1004380-2SC3646T-P-TD-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 120MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: PCP
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 400mV @ 40mA, 400mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 100mA, 5V
Maximum Power Dissipation: 500mW
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

Buy Now
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC3646T-P-TD-E - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC3646T-P-TD-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC3646T-P-TD-E
TRANS NPN 100V 1A PCP

TRANS NPN 100V 1A PCP

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors
Product Number 1004380-2SC3646T-P-TD-E 2SC3646T-P-TD-E
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SC3646T-P-TD-E Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN
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