onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 2SC3599E

The 2SC3599 is an NPN bipolar junction transistor designed for ultrahigh-definition CRT display and video output applications. It is housed in a TO-126 package with physical dimensions of 8.0 mm length, 4.0 mm width, and 5.1 mm height. The device has a collector-to-emitter breakdown voltage of 120 V, a continuous collector current rating of 300 mA, and a collector dissipation of 8 W at a case temperature of 25°C. It features a gain-bandwidth product of 500 MHz, a reverse transfer capacitance of 2.5 pF, and a complementary pairing with the 2SA1405 PNP transistor. The part meets standard semiconductor reliability requirements as implied by its listed absolute and electrical ratings, though no external standards such as AEC-Q200 or RoHS are explicitly cited. 2SC3599E is a variant of this series with a specified hFE range of 100 to 200, consistent with the E-bin classification for the 2SC3599 under typical test conditions.