onsemi Single Bipolar Transistors 2SC3503ESTU

Description
Bipolar (BJT) Transistor NPN 300V 100mA 150MHz 7W Through Hole TO-126-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 300V 100mA 150MHz 7W Through Hole TO-126-3
Request a Quote Datasheet

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Product
Description
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Single Bipolar Transistors - 2SC3503ESTU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SC3503ESTU-ND
Single Bipolar Transistors 2SC3503ESTU-ND
Bipolar (BJT) Transistor NPN 300V 100mA 150MHz 7W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN 300V 100mA 150MHz 7W Through Hole TO-126-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SC3503ESTU - 1004376-2SC3503ESTU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SC3503ESTU
1004376-2SC3503ESTU
TRANSISTORS - Transistors (BJT) - Single - 2SC3503ESTU 1004376-2SC3503ESTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1004376-2SC3503ESTU Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 150MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-126 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 300V Max Vce (sat): 600mV @ 2mA, 20mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 10mA, 10V Maximum Power Dissipation: 7W Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1004376-2SC3503ESTU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 150MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-126
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 300V
Max Vce (sat): 600mV @ 2mA, 20mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 10mA, 10V
Maximum Power Dissipation: 7W
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC3503ESTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC3503ESTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC3503ESTU
TRANS NPN 300V 0.1A TO126-3

TRANS NPN 300V 0.1A TO126-3

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 2SC3503ESTU-ND 1004376-2SC3503ESTU 2SC3503ESTU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SC3503ESTU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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