PNP and NPN silicon transistors for high-definition CRT video output applications, with a collector-to-emitter voltage rating of 300 V, a collector current rating of 100 mA, and a collector dissipation of 1.2 W at 25°C ambient temperature. The device is packaged in a TO-126 case with dimensions of 8.0 mm length, 5.51 mm width, and 2.1 mm height. Features include a gain-bandwidth product of 150 MHz, reverse transfer capacitance of 2.3 pF for the PNP variant and 1.8 pF for the NPN variant at 30 V, and a maximum junction temperature of 150°C. The 2SC3503D variant has a minimum hFE of 60 and a maximum of 120 at IC = -10 mA and VCE = -10 V.
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PNP and NPN silicon transistors for high-definition CRT video output applications, with a collector-to-emitter voltage rating of 300 V, a collector current rating of 100 mA, and a collector dissipation of 1.2 W at 25°C ambient temperature. The device is packaged in a TO-126 case with dimensions of 8.0 mm length, 5.51 mm width, and 2.1 mm height. Features include a gain-bandwidth product of 150 MHz, reverse transfer capacitance of 2.3 pF for the PNP variant and 1.8 pF for the NPN variant at 30 V, and a maximum junction temperature of 150°C. The 2SC3503D variant has a minimum hFE of 60 and a maximum of 120 at IC = -10 mA and VCE = -10 V.
