onsemi 2SC3468E

Description
Small Signal Bipolar Transistor, 0.1A, 300V, NPN, TO-226
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Description
Small Signal Bipolar Transistor, 0.1A, 300V, NPN, TO-226
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Datasheet
Datasheet Summary
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NPN silicon transistor for high-definition CRT video output applications, rated for 300 V collector-to-emitter voltage and 100 mA continuous collector current, with a gain-bandwidth product of 150 MHz and reverse transfer capacitance of 1.8 pF. Packaged in TO-226 format, with a maximum collector dissipation of 1.0 W and operating junction temperature up to 150 °C.

Datasheet Summary
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NPN silicon transistor for high-definition CRT video output applications, rated for 300 V collector-to-emitter voltage and 100 mA continuous collector current, with a gain-bandwidth product of 150 MHz and reverse transfer capacitance of 1.8 pF. Packaged in TO-226 format, with a maximum collector dissipation of 1.0 W and operating junction temperature up to 150 °C.

Suppliers

Company
Product
Description
Supplier Links
 - 2SC3468E - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A, 300V, NPN, TO-226

Small Signal Bipolar Transistor, 0.1A, 300V, NPN, TO-226

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number 2SC3468E
Polarity NPN
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