onsemi 2SC3468D

NPN silicon transistor for high-definition CRT video output applications, with a collector-to-emitter voltage rating of 300 V, collector current of 100 mA, and power dissipation of 1.0 W. Features a gain-bandwidth product of 150 MHz, reverse transfer capacitance of 1.8 pF, and collector-to-emitter saturation voltage of 0.6 V. Packaged in a TO-226 case with dimensions of 6.0 mm length, 5.0 mm width, and 1.45 mm lead spacing. Operates within a junction temperature range of -55°C to 150°C. Designed using the MBIT process.