onsemi 2SC3461M

NPN triple diffused planar silicon transistor for switching regulator applications with a collector-to-emitter voltage rating of 800 V, collector current of 8 A, and collector dissipation of 140 W at Tc=25°C. It features a high breakdown voltage, high-speed switching with a turn-on time of 0.5 µs, storage time of 3.0 µs, and fall time of 0.3 µs. The package is TO-3PB with dimensions of 15.6 mm height, 5.45 mm width, and 14.0 mm length. The transistor has a gain-bandwidth product of 15 MHz and an output capacitance of 155 pF. The hFE1 current gain ranges from 20 to 40 for the M variant. Junction temperature is rated up to 150°C.