onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC3142-3-TB-E

Description
NPN Epitaxial Planar Silicon Transistor For High-Frequency General-Purpose Amplifier Applications
  • 2SC3142-3-TB-E - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC3142-3-TB-E - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
NPN Epitaxial Planar Silicon Transistor For High-Frequency General-Purpose Amplifier Applications
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- 2SC3142-3-TB-E - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
2SC3142-3-TB-E
2SC3142-3-TB-E
NPN Epitaxial Planar Silicon Transistor For High-Frequency General-Purpose Amplifier Applications

NPN Epitaxial Planar Silicon Transistor For High-Frequency General-Purpose Amplifier Applications

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC3142-3-TB-E - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC3142-3-TB-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC3142-3-TB-E
NPN EPITAXIAL PLANAR SILICON

NPN EPITAXIAL PLANAR SILICON

Supplier's Site

Technical Specifications

  Rochester Electronics Acme Chip Technology Co., Limited
Product Category RF Transistors Bipolar RF Transistors
Product Number 2SC3142-3-TB-E 2SC3142-3-TB-E
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN
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