onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 2SC3135T-SPA

Description
Win Source Part Number: 1139476-2SC3135T-SPA Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 1 Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 200 mA Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Mounting Type: Through Hole Package / Case: SC-72 Supplier Device Package: 3-SPA ECCN: EAR99 Fake Threat In the Open Market: 57 pct. MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.21.0075 Mfr: onsemi Other Names: 2156-2SC3135T-SPA,ON SONS2SC3135T-SPA RoHS Status: Not applicable
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Description
Win Source Part Number: 1139476-2SC3135T-SPA Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 1 Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 200 mA Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Mounting Type: Through Hole Package / Case: SC-72 Supplier Device Package: 3-SPA ECCN: EAR99 Fake Threat In the Open Market: 57 pct. MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.21.0075 Mfr: onsemi Other Names: 2156-2SC3135T-SPA,ON SONS2SC3135T-SPA RoHS Status: Not applicable
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Suppliers

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Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1139476-2SC3135T-SPA - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1139476-2SC3135T-SPA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1139476-2SC3135T-SPA
Win Source Part Number: 1139476-2SC3135T-SPA Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 1 Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 200 mA Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V Mounting Type: Through Hole Package / Case: SC-72 Supplier Device Package: 3-SPA ECCN: EAR99 Fake Threat In the Open Market: 57 pct. MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS: 8541.21.0075 Mfr: onsemi Other Names: 2156-2SC3135T-SPA,ON SONS2SC3135T-SPA RoHS Status: Not applicable

Win Source Part Number: 1139476-2SC3135T-SPA
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Bulk
Standard Package: 1
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 200 mA
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Mounting Type: Through Hole
Package / Case: SC-72
Supplier Device Package: 3-SPA
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
REACH Status: Vendor Undefined
HTSUS: 8541.21.0075
Mfr: onsemi
Other Names: 2156-2SC3135T-SPA,ONSONS2SC3135T-SPA
RoHS Status: Not applicable

Buy Now Datasheet
 - 2SC3135T-SPA - Rochester Electronics
Newburyport, MA, United States
Bipolar NPN Transistor, 0.2A 50V

Bipolar NPN Transistor, 0.2A 50V

Supplier's Site Datasheet
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC3135T-SPA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC3135T-SPA
TRANS PNP 50V 0.2A 3SPA

TRANS PNP 50V 0.2A 3SPA

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics Acme Chip Technology Co., Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1139476-2SC3135T-SPA 2SC3135T-SPA 2SC3135T-SPA
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP NPN
Package Type SOT3 SC-72
IC(max) 200 milliamps 200 milliamps
Power Gain 100 dB
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