onsemi 2SC2814-4-TB-E

NPN epitaxial planar silicon transistor for high-frequency general-purpose amplifier applications in an ultrasmall package. It has a collector-to-base voltage rating of 30 V, collector-to-emitter voltage of 20 V, collector current of 30 mA, and power dissipation of 150 mW. The gain-bandwidth product is 320 MHz typical, and the reverse transfer capacitance is 0.95 pF typical. The DC current gain (hFE) is classified into ranks, with the -4 variant ranging from 90 to 180 at IC=1 mA.