onsemi 2SC2812-6-MTK-TB-E

NPN epitaxial planar silicon transistor for low-frequency general-purpose amplifier applications, housed in a miniature CP package measuring 5.2 mm x 5.0 mm x 3.0 mm. Rated for a collector-to-emitter voltage of 50 V, collector current of 150 mA, and collector dissipation of 200 mW. DC current gain (hFE) ranges from 200 to 400 for the 6-rank variant. Junction temperature operates up to 150°C. Meets RoHS standards.