onsemi TRANSISTORS - Transistors (BJT) - Single - 2SB817C-1E 2SB817C-1E

Description
Manufacturer: ON Semiconductor Win Source Part Number: 762537-2SB817C-1E Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-3P-3, SC-65-3 Power - Max: 120W Transistor Type: PNP Frequency - Transition: 10MHz Family Name: 2SB817C Categories: Discrete Semiconductor Products Manufacturer Package: TO-3P-3L Current - Collector (Ic) (Maximum): 12A Voltage - Collector Emitter Breakdown (Maximum): 140V Vce Saturation (Maximum) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Maximum): 100μA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 100 @ 1A, 5V Alternative Parts (Cross-Reference): 2SA1941; 2SA1941-O(LBIYAM); 2SB863; ; ECCN: EAR99 Estimated EOL Date: Obsolete Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors (BJT) - Single - 2SB817C-1E - 762537-2SB817C-1E - Win Source Electronics
    Win Source Electronics
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  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SB817C-1E - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 762537-2SB817C-1E Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-3P-3, SC-65-3 Power - Max: 120W Transistor Type: PNP Frequency - Transition: 10MHz Family Name: 2SB817C Categories: Discrete Semiconductor Products Manufacturer Package: TO-3P-3L Current - Collector (Ic) (Maximum): 12A Voltage - Collector Emitter Breakdown (Maximum): 140V Vce Saturation (Maximum) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Maximum): 100μA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 100 @ 1A, 5V Alternative Parts (Cross-Reference): 2SA1941; 2SA1941-O(LBIYAM); 2SB863; ; ECCN: EAR99 Estimated EOL Date: Obsolete Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2SB817C-1E - 762537-2SB817C-1E - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SB817C-1E
762537-2SB817C-1E
TRANSISTORS - Transistors (BJT) - Single - 2SB817C-1E 762537-2SB817C-1E
Manufacturer: ON Semiconductor Win Source Part Number: 762537-2SB817C-1E Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-3P-3, SC-65-3 Power - Max: 120W Transistor Type: PNP Frequency - Transition: 10MHz Family Name: 2SB817C Categories: Discrete Semiconductor Products Manufacturer Package: TO-3P-3L Current - Collector (Ic) (Maximum): 12A Voltage - Collector Emitter Breakdown (Maximum): 140V Vce Saturation (Maximum) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Maximum): 100μA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 100 @ 1A, 5V Alternative Parts (Cross-Reference): 2SA1941; 2SA1941-O(LBIYAM); 2SB863; ; ECCN: EAR99 Estimated EOL Date: Obsolete Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 762537-2SB817C-1E
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-3P-3, SC-65-3
Power - Max: 120W
Transistor Type: PNP
Frequency - Transition: 10MHz
Family Name: 2SB817C
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-3P-3L
Current - Collector (Ic) (Maximum): 12A
Voltage - Collector Emitter Breakdown (Maximum): 140V
Vce Saturation (Maximum) @ Ib, Ic: 2V @ 500mA, 5A
Current - Collector Cutoff (Maximum): 100μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 100 @ 1A, 5V
Alternative Parts (Cross-Reference): 2SA1941; 2SA1941-O(LBIYAM); 2SB863; ;
ECCN: EAR99
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single Bipolar Transistors - 2SB817C-1EOS-ND - DigiKey
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Thief River Falls, MN, United States
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2SB817C-1EOS-ND
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Bipolar (BJT) Transistor PNP 140V 12A 10MHz 120W Through Hole TO-3P-3L

Bipolar (BJT) Transistor PNP 140V 12A 10MHz 120W Through Hole TO-3P-3L

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SB817C-1E - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SB817C-1E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SB817C-1E
TRANS PNP 140V 12A TO3P-3L

TRANS PNP 140V 12A TO3P-3L

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 762537-2SB817C-1E 2SB817C-1EOS-ND 2SB817C-1E
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SB817C-1E Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
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