The 2SB1450 is a PNP silicon epitaxial planar transistor designed for switching applications, featuring a collector-to-emitter voltage rating of 50 V and a continuous collector current of 7 A. It is packaged in an SMP-FD surface mount case with dimensions of 10.2 mm by 9.9 mm, and a height of 2.0 mm. The device has a collector-to-emitter saturation voltage of 0.4 V at -4 A collector current and -0.4 A base current, and a DC current gain (hFE) range of 70 to 280, classified into grades Q, R, and S based on hFE at 1 A. The junction temperature is rated to 150 °C, with a power dissipation of 40 W at Tc=25°C. The storage temperature range is -55 °C to +150 °C. Turn-on time is 0.2 µs, storage time is 0.7 to 0.9 µs, and fall time is 0.1 to 0.3 µs.
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The 2SB1450 is a PNP silicon epitaxial planar transistor designed for switching applications, featuring a collector-to-emitter voltage rating of 50 V and a continuous collector current of 7 A. It is packaged in an SMP-FD surface mount case with dimensions of 10.2 mm by 9.9 mm, and a height of 2.0 mm. The device has a collector-to-emitter saturation voltage of 0.4 V at -4 A collector current and -0.4 A base current, and a DC current gain (hFE) range of 70 to 280, classified into grades Q, R, and S based on hFE at 1 A. The junction temperature is rated to 150 °C, with a power dissipation of 40 W at Tc=25°C. The storage temperature range is -55 °C to +150 °C. Turn-on time is 0.2 µs, storage time is 0.7 to 0.9 µs, and fall time is 0.1 to 0.3 µs.
