onsemi TRANSISTORS - Transistors (BJT) - Single - 2SB1216T-TL-E 2SB1216T-TL-E

Description
Manufacturer: ON Semiconductor Win Source Part Number: 197493-2SB1216T-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 2-TP-FA Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 500mV @ 200mA, 2A Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 200 @ 500mA, 5V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 197493-2SB1216T-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 2-TP-FA Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 500mV @ 200mA, 2A Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 200 @ 500mA, 5V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2SB1216T-TL-E - 197493-2SB1216T-TL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SB1216T-TL-E
197493-2SB1216T-TL-E
TRANSISTORS - Transistors (BJT) - Single - 2SB1216T-TL-E 197493-2SB1216T-TL-E
Manufacturer: ON Semiconductor Win Source Part Number: 197493-2SB1216T-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 2-TP-FA Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 500mV @ 200mA, 2A Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 200 @ 500mA, 5V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 197493-2SB1216T-TL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 130MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 2-TP-FA
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 500mV @ 200mA, 2A
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 200 @ 500mA, 5V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
100V 4A 1000mW DPAK Bipolar Transistor
276-2SB1216T-TL-E
100V 4A 1000mW DPAK Bipolar Transistor 276-2SB1216T-TL-E
PNP BJT Transistor, 100V, 4A, 1000mW, DPAK, SMT Product overview: 2SB1216T-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 4A, 1000mW, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 4A, 1000mW, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1216T-TL-E can be used for catalog matching and distributor lookup.

PNP BJT Transistor, 100V, 4A, 1000mW, DPAK, SMT Product overview: 2SB1216T-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 4A, 1000mW, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 4A, 1000mW, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1216T-TL-E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SB1216T-TL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SB1216T-TL-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SB1216T-TL-E
TRANS PNP 100V 4A TP-FA

TRANS PNP 100V 4A TP-FA

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 197493-2SB1216T-TL-E 276-2SB1216T-TL-E 2SB1216T-TL-E
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SB1216T-TL-E 100V 4A 1000mW DPAK Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP
Package Type SOT3; 2-TP-FA
IC(max) 4000 milliamps 4000 milliamps
VCBO 120 volts
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