onsemi Single Bipolar Transistors 2SB1216T-E

Bipolar (BJT) Transistor PNP 100V 4A 130MHz 1W Through Hole TP

Manufacturer: ON Semiconductor
Win Source Part Number: 1004272-2SB1216T-E
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 130MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TP
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 500mV @ 200mA, 2A
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 200 @ 500mA, 5V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient

PNP BJT Transistor, 100V, 4A, 1000mW, Through Hole, TP Package Product overview: 2SB1216T-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 100V, 4A, 1000mW. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 100V, 4A, 1000mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1216T-E can be used for catalog matching and distributor lookup.