onsemi 100V 4A 1W DPAK Bipolar Transistor 2SB1216S-TL-E

Description
PNP BJT 100V 4A 1W DPAK SMT Transistor Product overview: 2SB1216S-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 4A, 1W, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 4A, 1W, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1216S-TL-E can be used for catalog matching and distributor lookup.
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Description
PNP BJT 100V 4A 1W DPAK SMT Transistor Product overview: 2SB1216S-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 4A, 1W, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 4A, 1W, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1216S-TL-E can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
100V 4A 1W DPAK Bipolar Transistor
276-2SB1216S-TL-E
100V 4A 1W DPAK Bipolar Transistor 276-2SB1216S-TL-E
PNP BJT 100V 4A 1W DPAK SMT Transistor Product overview: 2SB1216S-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 4A, 1W, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 4A, 1W, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1216S-TL-E can be used for catalog matching and distributor lookup.

PNP BJT 100V 4A 1W DPAK SMT Transistor Product overview: 2SB1216S-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 4A, 1W, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 4A, 1W, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1216S-TL-E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single Bipolar Transistors - 2SB1216S-TL-EOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SB1216S-TL-EOSCT-ND
Single Bipolar Transistors 2SB1216S-TL-EOSCT-ND
Bipolar (BJT) Transistor PNP 100V 4A 130MHz 1W Surface Mount TP-FA

Bipolar (BJT) Transistor PNP 100V 4A 130MHz 1W Surface Mount TP-FA

Buy Now Datasheet
Single Bipolar Transistors - 2SB1216S-TL-EOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SB1216S-TL-EOSTR-ND
Single Bipolar Transistors 2SB1216S-TL-EOSTR-ND
Bipolar (BJT) Transistor PNP 100V 4A 130MHz 1W Surface Mount TP-FA

Bipolar (BJT) Transistor PNP 100V 4A 130MHz 1W Surface Mount TP-FA

Buy Now Datasheet
Single Bipolar Transistors - 2SB1216S-TL-E - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
2SB1216S-TL-E
Single Bipolar Transistors 2SB1216S-TL-E
TRANS PNP 100V 4A TPFA

TRANS PNP 100V 4A TPFA

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SB1216S-TL-E - 125749-2SB1216S-TL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SB1216S-TL-E
125749-2SB1216S-TL-E
TRANSISTORS - Transistors (BJT) - Single - 2SB1216S-TL-E 125749-2SB1216S-TL-E
Manufacturer: ON Semiconductor Win Source Part Number: 125749-2SB1216S-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 2-TP-FA Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 500mV @ 200mA, 2A Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 140 @ 500mA, 5V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 125749-2SB1216S-TL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 130MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 2-TP-FA
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 500mV @ 200mA, 2A
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 140 @ 500mA, 5V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SB1216S-TL-E
Bipolar Transistors - BJT 2SB1216S-TL-E
Bipolar Transistors - BJT BIP PNP 4A 100V

Bipolar Transistors - BJT BIP PNP 4A 100V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SB1216S-TL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SB1216S-TL-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SB1216S-TL-E
TRANS PNP 100V 4A TPFA

TRANS PNP 100V 4A TPFA

Supplier's Site
Transistor, Pnp, 100V, 4A, 20W, To-252; Transistor Polarity Onsemi - 07W7638 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Pnp, 100V, 4A, 20W, To-252; Transistor Polarity Onsemi
07W7638
Transistor, Pnp, 100V, 4A, 20W, To-252; Transistor Polarity Onsemi 07W7638
TRANSISTOR, PNP, 100V, 4A, 20W, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes

TRANSISTOR, PNP, 100V, 4A, 20W, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number 276-2SB1216S-TL-E 2SB1216S-TL-EOSCT-ND 2SB1216S-TL-E 125749-2SB1216S-TL-E 2SB1216S-TL-E 2SB1216S-TL-E 07W7638
Product Name 100V 4A 1W DPAK Bipolar Transistor Single Bipolar Transistors Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SB1216S-TL-E Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT) Transistor, Pnp, 100V, 4A, 20W, To-252; Transistor Polarity Onsemi
IC(max) 4000 milliamps 4000 milliamps 4000 milliamps
VCBO 120 volts
PD 1000 milliwatts
TJ -55 C (-67 F) 150 C (302 F)
Polarity PNP PNP; PNP PNP; PNP PNP
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