onsemi Single Bipolar Transistors 2SB1215T-H

Description
Bipolar (BJT) Transistor PNP 100V 3A 130MHz 1W Through Hole TP
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 100V 3A 130MHz 1W Through Hole TP
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - 2SB1215T-H-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SB1215T-H-ND
Single Bipolar Transistors 2SB1215T-H-ND
Bipolar (BJT) Transistor PNP 100V 3A 130MHz 1W Through Hole TP

Bipolar (BJT) Transistor PNP 100V 3A 130MHz 1W Through Hole TP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1193596-2SB1215T-H - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1193596-2SB1215T-H
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1193596-2SB1215T-H
Win Source Part Number: 1193596-2SB1215T-H Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 500 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 3 A Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V Frequency - Transition: 130MHz Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TP Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): 2SB1215TH; ECCN: EAR99 Fake Threat In the Open Market: 66 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Mfr: onsemi Other Names: 2832-2SB1215T-H,2832 -2SB1215T-H-488 Base Product Number: 2SB1215 Product Status: Not For New Designs

Win Source Part Number: 1193596-2SB1215T-H
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Bulk
Standard Package: 500
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 130MHz
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): 2SB1215TH;
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: onsemi
Other Names: 2832-2SB1215T-H,2832-2SB1215T-H-488
Base Product Number: 2SB1215
Product Status: Not For New Designs

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SB1215T-H
Bipolar Transistors - BJT 2SB1215T-H
Bipolar Transistors - BJT BIP PNP 3A 100V

Bipolar Transistors - BJT BIP PNP 3A 100V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SB1215T-H - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SB1215T-H
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SB1215T-H
TRANS PNP 100V 3A TP

TRANS PNP 100V 3A TP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 2SB1215T-H-ND 1193596-2SB1215T-H 2SB1215T-H 2SB1215T-H
Product Name Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3
IC(max) 3000 milliamps 3000 milliamps
Power Gain 200 dB
Operating Frequency 130 MHz
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