Win Source Part Number: 1193596-2SB1215T-H
Category: Discrete Semiconductor Products>Transistors
Package: Bulk
Standard Package: 500
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 130MHz
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): 2SB1215TH;
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: onsemi
Other Names: 2832-2SB1215T-H,2832
Base Product Number: 2SB1215
Product Status: Not For New Designs
Bipolar (BJT) Transistor PNP 100V 3A 130MHz 1W Through Hole TP
TRANS PNP 100V 3A TP
Bipolar Transistors - BJT BIP PNP 3A 100V
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 1193596-2SB1215T-H | 2SB1215T-H-ND | 2SB1215T-H | 2SB1215T-H |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT |
| Polarity | PNP | PNP | ||
| Package Type | SOT3 | TO-251-3 Short Leads, IPAK, TO-251AA | ||
| IC(max) | 3000 milliamps | 3000 milliamps | ||
| Power Gain | 200 dB | |||
| Operating Frequency | 130 MHz |
