Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA
Manufacturer: ON Semiconductor
Win Source Part Number: 762487-2SB1215T-E
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-251-3 Short Leads, IPak, TO-251AA
Power - Max: 1W
Transistor Type: PNP
Frequency - Transition: 130MHz
Family Name: 2SB1215T
Categories: Discrete Semiconductor Products
Manufacturer Package: TP
Current - Collector (Ic) (Maximum): 3A
Voltage - Collector Emitter Breakdown (Maximum): 100V
Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Maximum): 1μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 200 @ 500mA, 5V
ECCN: EAR99
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Bipolar Transistors - BJT BIP PNP 3A 100V
| Rochester Electronics | Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 2SB1215T-E | 762487-2SB1215T-E | 2SB1215T-E |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - 2SB1215T-E | Bipolar Transistors - BJT | |
| Polarity | PNP | PNP |
