onsemi Single Bipolar Transistors 2SB1215S-H

Description
Bipolar (BJT) Transistor PNP 100V 3A 130MHz 1W Through Hole TP
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 100V 3A 130MHz 1W Through Hole TP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 2SB1215S-H-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SB1215S-H-ND
Single Bipolar Transistors 2SB1215S-H-ND
Bipolar (BJT) Transistor PNP 100V 3A 130MHz 1W Through Hole TP

Bipolar (BJT) Transistor PNP 100V 3A 130MHz 1W Through Hole TP

Buy Now Datasheet
 - 2SB1215S-H - Rochester Electronics
Newburyport, MA, United States
Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA

Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SB1215S-H - 762488-2SB1215S-H - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SB1215S-H
762488-2SB1215S-H
TRANSISTORS - Transistors (BJT) - Single - 2SB1215S-H 762488-2SB1215S-H
Manufacturer: ON Semiconductor Win Source Part Number: 762488-2SB1215S-H Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-251-3 Short Leads, IPak, TO-251AA Power - Max: 1W Transistor Type: PNP Frequency - Transition: 130MHz Family Name: 2SB1215S Categories: Discrete Semiconductor Products Manufacturer Package: TP Current - Collector (Ic) (Maximum): 3A Voltage - Collector Emitter Breakdown (Maximum): 100V Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 150mA, 1.5A Current - Collector Cutoff (Maximum): 1μA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 140 @ 500mA, 5V Alternative Parts (Cross-Reference): 2SB1215S-E; 2SB1215S-TL-E; ; ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 762488-2SB1215S-H
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-251-3 Short Leads, IPak, TO-251AA
Power - Max: 1W
Transistor Type: PNP
Frequency - Transition: 130MHz
Family Name: 2SB1215S
Categories: Discrete Semiconductor Products
Manufacturer Package: TP
Current - Collector (Ic) (Maximum): 3A
Voltage - Collector Emitter Breakdown (Maximum): 100V
Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Maximum): 1μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 140 @ 500mA, 5V
Alternative Parts (Cross-Reference): 2SB1215S-E; 2SB1215S-TL-E; ;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SB1215S-H - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SB1215S-H
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SB1215S-H
TRANS PNP 100V 3A TP

TRANS PNP 100V 3A TP

Supplier's Site
TRANS PNP 100V 3A TP - 598-2SB1215S-H - Utmel Electronic Limited
Hong Kong, China
TRANS PNP 100V 3A TP
598-2SB1215S-H
TRANS PNP 100V 3A TP 598-2SB1215S-H
TRANS PNP 100V 3A TP

TRANS PNP 100V 3A TP

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors
Product Number 2SB1215S-H-ND 2SB1215S-H 762488-2SB1215S-H 2SB1215S-H 598-2SB1215S-H
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SB1215S-H Discrete Semiconductor Products - Transistors - Bipolar (BJT) TRANS PNP 100V 3A TP
Polarity PNP PNP PNP PNP; PNP
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