onsemi Single Bipolar Transistors 2SB1215S-E

Bipolar (BJT) Transistor PNP 100V 3A 130MHz 1W Through Hole TP

Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA, IPAK / TP, 500-BLKBG Product overview: 2SB1215S-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -100V, -3A. Search-friendly keywords include transistor, BJT, switching, amplification, -100V, -3A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1215S-E can be used for catalog matching and distributor lookup.

Win Source Part Number: 1036759-2SB1215S-E
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Bulk
Standard Package: 500
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 3 A
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): 2SB1215T-E; 2SB1215T-H; 2SB1216S-E2SB1215SE;
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: onsemi
Other Names: 2156-2SB1215S-E,ONSONS2SB1215S-E
Base Product Number: 2SB1215