onsemi Single Bipolar Transistors 2SB1205T-E

Description
Bipolar (BJT) Transistor PNP 20V 5A 320MHz 1W Through Hole TP
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 20V 5A 320MHz 1W Through Hole TP
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - 2SB1205T-E-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SB1205T-E-ND
Single Bipolar Transistors 2SB1205T-E-ND
Bipolar (BJT) Transistor PNP 20V 5A 320MHz 1W Through Hole TP

Bipolar (BJT) Transistor PNP 20V 5A 320MHz 1W Through Hole TP

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SB1205T-E - 762486-2SB1205T-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SB1205T-E
762486-2SB1205T-E
TRANSISTORS - Transistors (BJT) - Single - 2SB1205T-E 762486-2SB1205T-E
Manufacturer: ON Semiconductor Win Source Part Number: 762486-2SB1205T-E Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-251-3 Short Leads, IPak, TO-251AA Power - Max: 1W Transistor Type: PNP Frequency - Transition: 320MHz Family Name: 2SB1205T Categories: Discrete Semiconductor Products Manufacturer Package: TP Current - Collector (Ic) (Maximum): 5A Voltage - Collector Emitter Breakdown (Maximum): 20V Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 60mA, 3A Current - Collector Cutoff (Maximum): 500nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 200 @ 500mA, 2V Alternative Parts (Cross-Reference): 2DB1386Q-7; 2DB1386Q; 2DB1386Q-13; ; ECCN: EAR99 Estimated EOL Date: 2026 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 762486-2SB1205T-E
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-251-3 Short Leads, IPak, TO-251AA
Power - Max: 1W
Transistor Type: PNP
Frequency - Transition: 320MHz
Family Name: 2SB1205T
Categories: Discrete Semiconductor Products
Manufacturer Package: TP
Current - Collector (Ic) (Maximum): 5A
Voltage - Collector Emitter Breakdown (Maximum): 20V
Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Maximum): 500nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 200 @ 500mA, 2V
Alternative Parts (Cross-Reference): 2DB1386Q-7; 2DB1386Q; 2DB1386Q-13; ;
ECCN: EAR99
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SB1205T-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SB1205T-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SB1205T-E
TRANS PNP 20V 5A TP

TRANS PNP 20V 5A TP

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SB1205T-E
Bipolar Transistors - BJT 2SB1205T-E
Bipolar Transistors - BJT BIP PNP 5A 20V

Bipolar Transistors - BJT BIP PNP 5A 20V

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 2SB1205T-E-ND 762486-2SB1205T-E 2SB1205T-E 2SB1205T-E
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SB1205T-E Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity PNP PNP
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