onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 2SB1204T-E

Description
Win Source Part Number: 1036514-2SB1204T-E Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 500 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 8 A Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 130MHz Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TP Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): 2SA2040-E; 2SA2169-E; 2SB1204S-E; KSB907TU; ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Mfr: onsemi Other Names: 2156-2SB1204T-E,ONSO NS2SB1204T-E Base Product Number: 2SB1204 Product Status: Obsolete
Request a Quote Datasheet
Description
Win Source Part Number: 1036514-2SB1204T-E Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 500 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 8 A Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 130MHz Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TP Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): 2SA2040-E; 2SA2169-E; 2SB1204S-E; KSB907TU; ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Mfr: onsemi Other Names: 2156-2SB1204T-E,ONSO NS2SB1204T-E Base Product Number: 2SB1204 Product Status: Obsolete
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1036514-2SB1204T-E - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1036514-2SB1204T-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1036514-2SB1204T-E
Win Source Part Number: 1036514-2SB1204T-E Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 500 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 8 A Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 130MHz Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TP Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): 2SA2040-E; 2SA2169-E; 2SB1204S-E; KSB907TU; ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Mfr: onsemi Other Names: 2156-2SB1204T-E,ONSO NS2SB1204T-E Base Product Number: 2SB1204 Product Status: Obsolete

Win Source Part Number: 1036514-2SB1204T-E
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Bulk
Standard Package: 500
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 8 A
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): 2SA2040-E; 2SA2169-E; 2SB1204S-E; KSB907TU;
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: onsemi
Other Names: 2156-2SB1204T-E,ONSONS2SB1204T-E
Base Product Number: 2SB1204
Product Status: Obsolete

Buy Now Datasheet
Singapore
-50V -8A DPAK Bipolar Transistor
276-2SB1204T-E
-50V -8A DPAK Bipolar Transistor 276-2SB1204T-E
Bipolar Transistor, -50V, -8A, Low VCE(sat), PNP Single TP/TP-FA, DPAK / TP-FA, 500-BLKBG Product overview: 2SB1204T-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -50V, -8A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, -50V, -8A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1204T-E can be used for catalog matching and distributor lookup.

Bipolar Transistor, -50V, -8A, Low VCE(sat), PNP Single TP/TP-FA, DPAK / TP-FA, 500-BLKBG Product overview: 2SB1204T-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -50V, -8A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, -50V, -8A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1204T-E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SB1204T-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SB1204T-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SB1204T-E
TRANS PNP 50V 8A TP

TRANS PNP 50V 8A TP

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SB1204T-E
Bipolar Transistors - BJT 2SB1204T-E
Bipolar Transistors - BJT BIP PNP 8A 50V

Bipolar Transistors - BJT BIP PNP 8A 50V

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1036514-2SB1204T-E 276-2SB1204T-E 2SB1204T-E 2SB1204T-E
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single -50V -8A DPAK Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity PNP
Package Type SOT3
IC(max) 8000 milliamps 8000 milliamps
Power Gain 200 dB
Operating Frequency 130 MHz
Unlock Full Specs
to access all available technical data