onsemi TRANSISTORS - Transistors (BJT) - Single - 2SB1204S-TL-E 2SB1204S-TL-E

Description
Manufacturer: ON Semiconductor Win Source Part Number: 005820-2SB1204S-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 2-TP-FA Maximum Current Collector: 8A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 500mV @ 200mA, 4A Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 140 @ 500mA, 2V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 005820-2SB1204S-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 2-TP-FA Maximum Current Collector: 8A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 500mV @ 200mA, 4A Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 140 @ 500mA, 2V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2SB1204S-TL-E - 005820-2SB1204S-TL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SB1204S-TL-E
005820-2SB1204S-TL-E
TRANSISTORS - Transistors (BJT) - Single - 2SB1204S-TL-E 005820-2SB1204S-TL-E
Manufacturer: ON Semiconductor Win Source Part Number: 005820-2SB1204S-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 2-TP-FA Maximum Current Collector: 8A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 500mV @ 200mA, 4A Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 140 @ 500mA, 2V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 005820-2SB1204S-TL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 130MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 2-TP-FA
Maximum Current Collector: 8A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 500mV @ 200mA, 4A
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 140 @ 500mA, 2V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
-50V -8A 130MHz DPAK Bipolar Transistor
276-2SB1204S-TL-E
-50V -8A 130MHz DPAK Bipolar Transistor 276-2SB1204S-TL-E
PNP BJT Transistor, -50V, -8A, 130MHz, DPAK Product overview: 2SB1204S-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -50V, -8A, 130MHz, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, -50V, -8A, 130MHz, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1204S-TL-E can be used for catalog matching and distributor lookup.

PNP BJT Transistor, -50V, -8A, 130MHz, DPAK Product overview: 2SB1204S-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -50V, -8A, 130MHz, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, -50V, -8A, 130MHz, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1204S-TL-E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - 2SB1204S-TL-E - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 8A, PNP

Small Signal Bipolar Transistor, 8A, PNP

Supplier's Site Datasheet
Transistor - 109105163 - Radwell International
Willingboro, NJ, United States
Transistor
109105163
Transistor 109105163
BIPOLAR TRANSISTOR, SMD/SMT, SINGLE, 50 V, 250 MV, 8 A, 1 W, 130 MHZ, 2.3 X 9.5 X 6.5 MM. FREE 2 YEAR RADWELL WARRANTY

BIPOLAR TRANSISTOR, SMD/SMT, SINGLE, 50 V, 250 MV, 8 A, 1 W, 130 MHZ, 2.3 X 9.5 X 6.5 MM. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SB1204S-TL-E
Bipolar Transistors - BJT 2SB1204S-TL-E
Bipolar Transistors - BJT LOW-SATURATION VOLTAGE

Bipolar Transistors - BJT LOW-SATURATION VOLTAGE

Buy Now Datasheet
Transistor, Pnp, -50V, -8A, To-252; Transistor Polarity Onsemi - 14AC5522 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Pnp, -50V, -8A, To-252; Transistor Polarity Onsemi
14AC5522
Transistor, Pnp, -50V, -8A, To-252; Transistor Polarity Onsemi 14AC5522
TRANSISTOR, PNP, -50V, -8A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:130MHz; Power Dissipation Pd:20W; DC Collector Current:-8A; DC Current Gain hFE:140hFE; Transistor Case RoHS Compliant: Yes

TRANSISTOR, PNP, -50V, -8A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:130MHz; Power Dissipation Pd:20W; DC Collector Current:-8A; DC Current Gain hFE:140hFE; Transistor Case RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SB1204S-TL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SB1204S-TL-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SB1204S-TL-E
TRANS PNP 50V 8A TPFA

TRANS PNP 50V 8A TPFA

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Rochester Electronics Radwell International VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 005820-2SB1204S-TL-E 276-2SB1204S-TL-E 2SB1204S-TL-E 109105163 2SB1204S-TL-E 14AC5522 2SB1204S-TL-E
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SB1204S-TL-E -50V -8A 130MHz DPAK Bipolar Transistor Transistor Bipolar Transistors - BJT Transistor, Pnp, -50V, -8A, To-252; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP PNP PNP PNP
Package Type SOT3; 2-TP-FA DPAK-3 TO-3
IC(max) 8000 milliamps 8000 milliamps
VCEO 50 volts 50 volts
VCBO 60 volts
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