onsemi TRANSISTORS - Transistors (BJT) - Single - 2SB1203S-TL-E 2SB1203S-TL-E

Description
Manufacturer: ON Semiconductor Win Source Part Number: 005819-2SB1203S-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 2-TP-FA Maximum Current Collector: 5A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 550mV @ 150mA, 3A Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 70 @ 500mA, 2V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 005819-2SB1203S-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 2-TP-FA Maximum Current Collector: 5A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 550mV @ 150mA, 3A Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 70 @ 500mA, 2V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2SB1203S-TL-E - 005819-2SB1203S-TL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SB1203S-TL-E
005819-2SB1203S-TL-E
TRANSISTORS - Transistors (BJT) - Single - 2SB1203S-TL-E 005819-2SB1203S-TL-E
Manufacturer: ON Semiconductor Win Source Part Number: 005819-2SB1203S-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 2-TP-FA Maximum Current Collector: 5A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 550mV @ 150mA, 3A Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 70 @ 500mA, 2V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 005819-2SB1203S-TL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 130MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 2-TP-FA
Maximum Current Collector: 5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 550mV @ 150mA, 3A
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 70 @ 500mA, 2V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single Bipolar Transistors - 2SB1203S-TL-EOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SB1203S-TL-EOSTR-ND
Single Bipolar Transistors 2SB1203S-TL-EOSTR-ND
Bipolar (BJT) Transistor PNP 50V 5A 130MHz 1W Surface Mount TP-FA

Bipolar (BJT) Transistor PNP 50V 5A 130MHz 1W Surface Mount TP-FA

Buy Now Datasheet
Singapore
-50V -5A DPAK Bipolar Transistor
276-2SB1203S-TL-E
-50V -5A DPAK Bipolar Transistor 276-2SB1203S-TL-E
Bipolar Transistor, -50V, -5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA, DPAK / TP-FA, 700-REEL Product overview: 2SB1203S-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -50V, -5A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, -50V, -5A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1203S-TL-E can be used for catalog matching and distributor lookup.

Bipolar Transistor, -50V, -5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA, DPAK / TP-FA, 700-REEL Product overview: 2SB1203S-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -50V, -5A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, -50V, -5A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1203S-TL-E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SB1203S-TL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SB1203S-TL-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SB1203S-TL-E
TRANS PNP 50V 5A TP-FA

TRANS PNP 50V 5A TP-FA

Supplier's Site
Transistor, Pnp, -50V, -5A, To-252; Transistor Polarity Onsemi - 14AC5521 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Pnp, -50V, -5A, To-252; Transistor Polarity Onsemi
14AC5521
Transistor, Pnp, -50V, -5A, To-252; Transistor Polarity Onsemi 14AC5521
TRANSISTOR, PNP, -50V, -5A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:130MHz; Power Dissipation Pd:20W; DC Collector Current:-5A; DC Current Gain hFE:140hFE; Transistor Case RoHS Compliant: Yes

TRANSISTOR, PNP, -50V, -5A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:130MHz; Power Dissipation Pd:20W; DC Collector Current:-5A; DC Current Gain hFE:140hFE; Transistor Case RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SB1203S-TL-E
Bipolar Transistors - BJT 2SB1203S-TL-E
Bipolar Transistors - BJT BIP PNP 5A 50V

Bipolar Transistors - BJT BIP PNP 5A 50V

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Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 005819-2SB1203S-TL-E 2SB1203S-TL-EOSTR-ND 276-2SB1203S-TL-E 2SB1203S-TL-E 14AC5521 2SB1203S-TL-E
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SB1203S-TL-E Single Bipolar Transistors -50V -5A DPAK Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) Transistor, Pnp, -50V, -5A, To-252; Transistor Polarity Onsemi Bipolar Transistors - BJT
Polarity PNP; PNP PNP PNP PNP
Package Type SOT3; 2-TP-FA TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-3
IC(max) 5000 milliamps 5000 milliamps
VCEO 50 volts 50 volts
VCBO -60 volts
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