Bipolar (BJT) Transistor PNP 50V 5A 130MHz 1W Through Hole TP
PNP BJT Transistor 50V 5A TO-251 IPAK Through Hole Product overview: 2SB1203S-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 50V, 5A. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 50V, 5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1203S-E can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 1124810-2SB1203S-E
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: PNP
Frequency - Transition: 130MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TP
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA
Current - Collector (Ic) (Maximum): 5A
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 1μA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Family Part Number: 2SB1203
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 550mV at 150mA, 3A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 140 at 500mA, 2V
Maximum Power: 1W
Bipolar Transistors - BJT BIP PNP 5A 50V
TRANS PNP 50V 5A TP
TRANSISTOR, BIPOLAR, PNP, 50V, 5A/TO-251; Transistor Polarity:PNP; Collector Emitter Voltage Max:50V; Continuous Collector Current:5A; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 2SB1203S-EOS-ND | 276-2SB1203S-E | 1124810-2SB1203S-E | 2SB1203S-E | 2SB1203S-E | 07W7617 |
| Product Name | Single Bipolar Transistors | Through-Hole 50V 5A Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - 2SB1203S-E | Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Transistor, Bipolar, Pnp, 50V, 5A/to-251; Transistor Polarity Onsemi |
| Polarity | PNP | PNP | PNP | |||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | SOT3 | TO-3 | |||
| IC(max) | 5000 milliamps | 1.00E-3 milliamps | 5000 milliamps | 5000 milliamps | ||
| VCBO | 60 volts | |||||
| PD | 1000 milliwatts | 20000 milliwatts |
