onsemi TRANSISTORS - Transistors (BJT) - Single - 2SB1203S-E 2SB1203S-E

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1124810-2SB1203S-E Packaging: Bulk Mounting Style: Through Hole Transistor Type: PNP Frequency - Transition: 130MHz Categories: Discrete Semiconductor Products Supplier Device Package: TP Temperature Range - Operating: 150°C Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Current - Collector (Ic) (Maximum): 5A Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 1μA (ICBO) Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited Family Part Number: 2SB1203 Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 550mV at 150mA, 3A DC Current Gain (hFE) (Minimum) at Ic, Vce: 140 at 500mA, 2V Maximum Power: 1W
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1124810-2SB1203S-E Packaging: Bulk Mounting Style: Through Hole Transistor Type: PNP Frequency - Transition: 130MHz Categories: Discrete Semiconductor Products Supplier Device Package: TP Temperature Range - Operating: 150°C Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Current - Collector (Ic) (Maximum): 5A Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 1μA (ICBO) Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited Family Part Number: 2SB1203 Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 550mV at 150mA, 3A DC Current Gain (hFE) (Minimum) at Ic, Vce: 140 at 500mA, 2V Maximum Power: 1W
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2SB1203S-E - 1124810-2SB1203S-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SB1203S-E
1124810-2SB1203S-E
TRANSISTORS - Transistors (BJT) - Single - 2SB1203S-E 1124810-2SB1203S-E
Manufacturer: ON Semiconductor Win Source Part Number: 1124810-2SB1203S-E Packaging: Bulk Mounting Style: Through Hole Transistor Type: PNP Frequency - Transition: 130MHz Categories: Discrete Semiconductor Products Supplier Device Package: TP Temperature Range - Operating: 150°C Manufacturer Homepage: www.onsemi.com Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Current - Collector (Ic) (Maximum): 5A Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 1μA (ICBO) Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited Family Part Number: 2SB1203 Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 550mV at 150mA, 3A DC Current Gain (hFE) (Minimum) at Ic, Vce: 140 at 500mA, 2V Maximum Power: 1W

Manufacturer: ON Semiconductor
Win Source Part Number: 1124810-2SB1203S-E
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: PNP
Frequency - Transition: 130MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TP
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA
Current - Collector (Ic) (Maximum): 5A
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 1μA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Family Part Number: 2SB1203
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 550mV at 150mA, 3A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 140 at 500mA, 2V
Maximum Power: 1W

Buy Now
Single Bipolar Transistors - 2SB1203S-EOS-ND - DigiKey
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Single Bipolar Transistors
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Bipolar (BJT) Transistor PNP 50V 5A 130MHz 1W Through Hole TP

Bipolar (BJT) Transistor PNP 50V 5A 130MHz 1W Through Hole TP

Buy Now Datasheet
Transistor, Bipolar, Pnp, 50V, 5A/to-251; Transistor Polarity Onsemi - 07W7617 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar, Pnp, 50V, 5A/to-251; Transistor Polarity Onsemi
07W7617
Transistor, Bipolar, Pnp, 50V, 5A/to-251; Transistor Polarity Onsemi 07W7617
TRANSISTOR, BIPOLAR, PNP, 50V, 5A/TO-251; Transistor Polarity:PNP; Collector Emitter Voltage Max:50V; Continuous Collector Current:5A; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes

TRANSISTOR, BIPOLAR, PNP, 50V, 5A/TO-251; Transistor Polarity:PNP; Collector Emitter Voltage Max:50V; Continuous Collector Current:5A; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SB1203S-E
Bipolar Transistors - BJT 2SB1203S-E
Bipolar Transistors - BJT BIP PNP 5A 50V

Bipolar Transistors - BJT BIP PNP 5A 50V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SB1203S-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SB1203S-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SB1203S-E
TRANS PNP 50V 5A TP

TRANS PNP 50V 5A TP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1124810-2SB1203S-E 2SB1203S-EOS-ND 07W7617 2SB1203S-E 2SB1203S-E
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SB1203S-E Single Bipolar Transistors Transistor, Bipolar, Pnp, 50V, 5A/to-251; Transistor Polarity Onsemi Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP
Package Type SOT3 TO-251-3 Short Leads, IPAK, TO-251AA TO-3
Packing Method Bulk; Bulk Bulk; Bulk
IC(max) 1.00E-3 milliamps 5000 milliamps 5000 milliamps
Power Gain 140 dB
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