onsemi Single Bipolar Transistors 2SB1202T-E

Bipolar (BJT) Transistor PNP 50V 3A 150MHz 1W Through Hole TP

PNP BJT 50V 5A 1000mW TO-251 Transistor Product overview: 2SB1202T-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 5A, 1000mW. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 5A, 1000mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1202T-E can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 736253-2SB1202T-E
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: PNP
Frequency - Transition: 150MHz
Part Status: Last Time Buy
Categories: Discrete Semiconductor Products
Supplier Device Package: TP
Temperature Range - Operating: 150°C
Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA
Current - Collector (Ic) (Maximum): 3A
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 1μA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
Family Part Number: 2SB1202
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 700mV at 100mA, 2A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 200 at 100mA, 2V
Maximum Power: 1W