onsemi TRANSISTORS - Transistors (BJT) - Single - 2SB1201S-TL-E 2SB1201S-TL-E

Description
Manufacturer: ON Semiconductor Win Source Part Number: 097880-2SB1201S-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 2-TP-FA Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 700mV @ 50mA, 1A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 100mA, 2V Maximum Power Dissipation: 800mW Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 097880-2SB1201S-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 2-TP-FA Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 700mV @ 50mA, 1A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 100mA, 2V Maximum Power Dissipation: 800mW Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2SB1201S-TL-E - 097880-2SB1201S-TL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SB1201S-TL-E
097880-2SB1201S-TL-E
TRANSISTORS - Transistors (BJT) - Single - 2SB1201S-TL-E 097880-2SB1201S-TL-E
Manufacturer: ON Semiconductor Win Source Part Number: 097880-2SB1201S-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 2-TP-FA Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 700mV @ 50mA, 1A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 100mA, 2V Maximum Power Dissipation: 800mW Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 097880-2SB1201S-TL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 2-TP-FA
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 700mV @ 50mA, 1A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 100mA, 2V
Maximum Power Dissipation: 800mW
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
-50V -2A DPAK Bipolar Transistor
276-2SB1201S-TL-E
-50V -2A DPAK Bipolar Transistor 276-2SB1201S-TL-E
Bipolar Transistor, -50V, -2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA, DPAK / TP-FA, 700-REEL Product overview: 2SB1201S-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -50V, -2A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, -50V, -2A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1201S-TL-E can be used for catalog matching and distributor lookup.

Bipolar Transistor, -50V, -2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA, DPAK / TP-FA, 700-REEL Product overview: 2SB1201S-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -50V, -2A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, -50V, -2A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1201S-TL-E can be used for catalog matching and distributor lookup.

Supplier's Site
Single Bipolar Transistors - 2SB1201S-TL-EOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SB1201S-TL-EOSCT-ND
Single Bipolar Transistors 2SB1201S-TL-EOSCT-ND
Bipolar (BJT) Transistor PNP 50V 2A 150MHz 800mW Surface Mount TP-FA

Bipolar (BJT) Transistor PNP 50V 2A 150MHz 800mW Surface Mount TP-FA

Buy Now Datasheet
Single Bipolar Transistors - 2SB1201S-TL-EOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SB1201S-TL-EOSTR-ND
Single Bipolar Transistors 2SB1201S-TL-EOSTR-ND
Bipolar (BJT) Transistor PNP 50V 2A 150MHz 800mW Surface Mount TP-FA

Bipolar (BJT) Transistor PNP 50V 2A 150MHz 800mW Surface Mount TP-FA

Buy Now Datasheet
Single Bipolar Transistors - 2SB1201S-TL-EOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SB1201S-TL-EOSDKR-ND
Single Bipolar Transistors 2SB1201S-TL-EOSDKR-ND
Bipolar (BJT) Transistor PNP 50V 2A 150MHz 800mW Surface Mount TP-FA

Bipolar (BJT) Transistor PNP 50V 2A 150MHz 800mW Surface Mount TP-FA

Buy Now Datasheet
Single Bipolar Transistors - 2SB1201S-TL-E - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
2SB1201S-TL-E
Single Bipolar Transistors 2SB1201S-TL-E
TRANS PNP 50V 2A TP-FA

TRANS PNP 50V 2A TP-FA

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SB1201S-TL-E
Bipolar Transistors - BJT 2SB1201S-TL-E
Bipolar Transistors - BJT BIP PNP 2A 50V

Bipolar Transistors - BJT BIP PNP 2A 50V

Buy Now Datasheet
Bipolar Transistor, Pnp, -50V, To-252-4; Transistor Polarity Onsemi - 42AC1860 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Pnp, -50V, To-252-4; Transistor Polarity Onsemi
42AC1860
Bipolar Transistor, Pnp, -50V, To-252-4; Transistor Polarity Onsemi 42AC1860
BIPOLAR TRANSISTOR, PNP, -50V, TO-252-4; Transistor Polarity:PNP; Collector Emitter Voltage Max:50V; Continuous Collector Current:2A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Product Range:- RoHS Compliant: Yes

BIPOLAR TRANSISTOR, PNP, -50V, TO-252-4; Transistor Polarity:PNP; Collector Emitter Voltage Max:50V; Continuous Collector Current:2A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site Datasheet
Bipolar Transistor, Pnp, -50V, To-252-4; Transistor Polarity Onsemi - 99AC6850 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Pnp, -50V, To-252-4; Transistor Polarity Onsemi
99AC6850
Bipolar Transistor, Pnp, -50V, To-252-4; Transistor Polarity Onsemi 99AC6850
BIPOLAR TRANSISTOR, PNP, -50V, TO-252-4; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:150MHz; Power Dissipation Pd:15W; DC Collector Current:-2A; DC Current Gain hFE:140hFE; Transistor RoHS Compliant: Yes

BIPOLAR TRANSISTOR, PNP, -50V, TO-252-4; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:150MHz; Power Dissipation Pd:15W; DC Collector Current:-2A; DC Current Gain hFE:140hFE; Transistor RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SB1201S-TL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SB1201S-TL-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SB1201S-TL-E
TRANS PNP 50V 2A TP-FA

TRANS PNP 50V 2A TP-FA

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 097880-2SB1201S-TL-E 276-2SB1201S-TL-E 2SB1201S-TL-EOSCT-ND 2SB1201S-TL-E 2SB1201S-TL-E 42AC1860 99AC6850 2SB1201S-TL-E
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SB1201S-TL-E -50V -2A DPAK Bipolar Transistor Single Bipolar Transistors Single Bipolar Transistors Bipolar Transistors - BJT Bipolar Transistor, Pnp, -50V, To-252-4; Transistor Polarity Onsemi Bipolar Transistor, Pnp, -50V, To-252-4; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP PNP PNP PNP; PNP PNP PNP
Package Type SOT3; 2-TP-FA TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3 TO-3
IC(max) 2000 milliamps 2000 milliamps 2000 milliamps -2000 milliamps 2000 milliamps
VCEO 50 volts 50 volts 50 volts 50 volts
VCBO -60 volts
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