onsemi Through-Hole 50V 2A 800mW Bipolar Transistor 2SB1201S-E

PNP BJT 50V 2A 800mW Through Hole TP Product overview: 2SB1201S-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 50V, 2A, 800mW. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 50V, 2A, 800mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1201S-E can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 075421-2SB1201S-E
Packaging: Bulk
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 2-TP-FA
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 700mV @ 50mA, 1A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 140 @ 100mA, 2V
Maximum Power Dissipation: 800mW
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Bipolar (BJT) Transistor PNP 50V 2A 150MHz 800mW Surface Mount TP-FA