The 2SB1135R is a PNP silicon transistor in a TO-220ML package, designed for high-current switching applications such as relay drivers and inverters. It has a collector-to-emitter voltage rating of 50 V and a continuous collector current of 7 A, with a collector-to-emitter saturation voltage of 0.4 V at 4 A collector current. The device has a d.c. current gain (hFE) range of 100 to 200. The package is micaless and supports direct mounting. The junction temperature maximum is 150 °C, and the storage temperature range is -55 °C to 150 °C.
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The 2SB1135R is a PNP silicon transistor in a TO-220ML package, designed for high-current switching applications such as relay drivers and inverters. It has a collector-to-emitter voltage rating of 50 V and a continuous collector current of 7 A, with a collector-to-emitter saturation voltage of 0.4 V at 4 A collector current. The device has a d.c. current gain (hFE) range of 100 to 200. The package is micaless and supports direct mounting. The junction temperature maximum is 150 °C, and the storage temperature range is -55 °C to 150 °C.
