Manufacturer: ON Semiconductor
Win Source Part Number: 005802-2SB1122S-TD-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PCP
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 500mV @ 50mA, 500mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 100mA, 2V
Maximum Power Dissipation: 500mW
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
PNP BJT Transistor, -50V, -1A, Low VCE(sat), SOT-89 Product overview: 2SB1122S-TD-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -50V, -1A, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, -50V, -1A, SOT-89, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1122S-TD-E can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor PNP 50V 1A 150MHz 500mW Surface Mount PCP
Bipolar Transistors - BJT BIP PNP 1A 50V
TRANSISTOR, PNP, -50V, -1A, SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:150MHz; Power Dissipation Pd:1.3W; DC Collector Current:-1A; DC Current Gain hFE:140hFE; Transistor Case RoHS Compliant: Yes
TRANS PNP 50V 1A PCP
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 005802-2SB1122S-TD-E | 276-2SB1122S-TD-E | 2SB1122S-TD-EOSTR-ND | 2SB1122S-TD-E | 99AC6849 | 2SB1122S-TD-E |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - 2SB1122S-TD-E | -50V -1A SOT-89 Bipolar Transistor | Single Bipolar Transistors | Bipolar Transistors - BJT | Transistor, Pnp, -50V, -1A, Sot-89; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | PNP; PNP | PNP | PNP | PNP | ||
| Package Type | SOT3; PCP | TO-243AA | TO-3; SOT89 | |||
| IC(max) | 1000 milliamps | 1000 milliamps | ||||
| VCEO | 50 volts | 50 volts | ||||
| VCBO | -60 volts |
