onsemi Single Bipolar Transistors 2SA2127-AE

Description
Bipolar (BJT) Transistor PNP 50V 2A 420MHz 1W Through Hole 3-MP
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 50V 2A 420MHz 1W Through Hole 3-MP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 2SA2127-AEOSTB-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SA2127-AEOSTB-ND
Single Bipolar Transistors 2SA2127-AEOSTB-ND
Bipolar (BJT) Transistor PNP 50V 2A 420MHz 1W Through Hole 3-MP

Bipolar (BJT) Transistor PNP 50V 2A 420MHz 1W Through Hole 3-MP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1154964-2SA2127-AE - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1154964-2SA2127-AE
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1154964-2SA2127-AE
Win Source Part Number: 1154964-2SA2127-AE Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Cut Tape (CT),Tape & Box (TB) Standard Package: 1,000 Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 2 A Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 420MHz Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package: 3-MP Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): 2SA2127AE; ECCN: EAR99 Fake Threat In the Open Market: 47 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0075 Mfr: onsemi Other Names: ONSONS2SA2127-AE,2SA 2127-AE-ND,2156-2SA2 127-AE,2SA2127-AEOSC T,2SA2127-AEOSTB Base Product Number: 2SA2127 Product Status: Obsolete

Win Source Part Number: 1154964-2SA2127-AE
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Cut Tape (CT),Tape & Box (TB)
Standard Package: 1,000
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: 3-MP
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): 2SA2127AE;
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: onsemi
Other Names: ONSONS2SA2127-AE,2SA2127-AE-ND,2156-2SA2127-AE,2SA2127-AEOSCT,2SA2127-AEOSTB
Base Product Number: 2SA2127
Product Status: Obsolete

Buy Now Datasheet
Singapore
50V 2A 1000mW Bipolar Transistor
276-2SA2127-AE
50V 2A 1000mW Bipolar Transistor 276-2SA2127-AE
PNP BJT 50V 2A 1000mW Si MP Case 3-Pin Product overview: 2SA2127-AE from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 2A, 1000mW. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 2A, 1000mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA2127-AE can be used for catalog matching and distributor lookup.

PNP BJT 50V 2A 1000mW Si MP Case 3-Pin Product overview: 2SA2127-AE from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 2A, 1000mW. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 2A, 1000mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA2127-AE can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SA2127-AE - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SA2127-AE
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SA2127-AE
TRANS PNP 50V 2A 3MP

TRANS PNP 50V 2A 3MP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Acme Chip Technology Co., Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 2SA2127-AEOSTB-ND 1154964-2SA2127-AE 276-2SA2127-AE 2SA2127-AE
Product Name Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 50V 2A 1000mW Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
Package Type TO-92; TO-226-3, TO-92-3 Long Body, Formed Leads SOT3 3-MP
IC(max) 2000 milliamps 2000 milliamps 2000 milliamps
Power Gain 200 dB
Operating Frequency 420 MHz
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