2SA2013-TD-E, BIP PNP 4A 50V
2SA2013-TD-E, BIP PNP 4A 50V
2SA2013-TD-E, BIP PNP 4A 50V
PNP BJT Transistor, -50V, -4A, 360MHz, SOT-89 Product overview: 2SA2013-TD-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -50V, -4A, 360MHz, SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, -50V, -4A, 360MHz, SOT-89, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA2013-TD-E can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 005782-2SA2013-TD-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 400MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PCP
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 340mV @ 100mA, 2A
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 200 @ 500mA, 2V
Maximum Power Dissipation: 3.5W
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient
Bipolar (BJT) Transistor PNP 50V 4A 400MHz 3.5W Surface Mount PCP
Bipolar (BJT) Transistor PNP 50V 4A 400MHz 3.5W Surface Mount PCP
Bipolar (BJT) Transistor PNP 50V 4A 400MHz 3.5W Surface Mount PCP
TRANS PNP 50V 4A PCP
Bipolar Transistors - BJT BIP PNP 4A 50V
Bipolar Transistors - BJT BIP PNP 4A 50V
TRANS PNP 50V 4A PCP
TRANSISTOR, PNP, -50V, -4A, SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:50V; DC Collector Current:4A; Power Dissipation Pd:3.5W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; DC Current Gain hFE:200hFERoHS Compliant: Yes
TRANSISTOR, PNP, -50V, -4A, SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:400MHz; Power Dissipation Pd:3.5W; DC Collector Current:-4A; DC Current Gain hFE:200hFE; Transistor Case RoHS Compliant: Yes
| RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors |
| Product Number | 8009257P | 8009257 | 276-2SA2013-TD-E | 005782-2SA2013-TD-E | 2SA2013-TD-EOSDKR-ND | 2SA2013-TD-E | 598-2SA2013-TD-E | 2SA2013-TD-E | 2SA2013-TD-E | 13AC6275 |
| Product Name | Bipolar Transistors | Bipolar Transistors | -50V -4A 360MHz SOT-89 Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - 2SA2013-TD-E | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT BIP PNP 4A 50V | Bipolar Transistors - BJT | Single Bipolar Transistors | Transistor, Pnp, -50V, -4A, Sot-89; Transistor Polarity Onsemi |
| Polarity | PNP | PNP | PNP | PNP; PNP | PNP | PNP; PNP | PNP; PNP | PNP | ||
| Package Type | PCP | Pcp | SOT3; PCP | TO-243AA | TO-243AA | TO-3; SOT89 | ||||
| Number of units in IC | 1 | 1 | ||||||||
| IC(max) | 4000 milliamps | 4000 milliamps | 4000 milliamps | 4000 milliamps | ||||||
| VCEO | 50 volts | 50 volts | 50 volts | 50 volts |
