onsemi 2SA1824S-AY

Description
PNP Epitaxial Planar Silicon Transistor
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Description
PNP Epitaxial Planar Silicon Transistor
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Datasheet
Datasheet Summary
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PNP Epitaxial Planar Silicon Transistor for high-current switching applications, housed in the FLP package with dimensions 10.5 mm x 5.8 mm x 1.9 mm. It has a collector-to-emitter voltage rating of 50 V, collector current of 5 A, and collector dissipation of 1.5 W. Features include low collector-to-emitter saturation voltage, high gain-bandwidth product of 130 MHz, fast switching speed with turn-on time of 50 ns, and DC current gain (hFE) ranging from 140 to 280 for the S rank. Junction temperature operates up to 150 °C.

Datasheet Summary
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PNP Epitaxial Planar Silicon Transistor for high-current switching applications, housed in the FLP package with dimensions 10.5 mm x 5.8 mm x 1.9 mm. It has a collector-to-emitter voltage rating of 50 V, collector current of 5 A, and collector dissipation of 1.5 W. Features include low collector-to-emitter saturation voltage, high gain-bandwidth product of 130 MHz, fast switching speed with turn-on time of 50 ns, and DC current gain (hFE) ranging from 140 to 280 for the S rank. Junction temperature operates up to 150 °C.

Suppliers

Company
Product
Description
Supplier Links
 - 2SA1824S-AY - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Planar Silicon Transistor

PNP Epitaxial Planar Silicon Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF Transistors
Product Number 2SA1824S-AY
Polarity PNP
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