onsemi 2SA1773E-TL-E

Description
Transistor for High Voltage Driver
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Description
Transistor for High Voltage Driver
Request a Quote
Datasheet
Datasheet Summary
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The 2SA1773 is a PNP epitaxial planar silicon transistor designed for high-voltage driver applications, with a collector-to-emitter voltage rating of 400 V and a continuous collector current of 2 A. It is housed in a package with dimensions of 8.0 mm × 5.1 mm × 5.5 mm and features a maximum collector dissipation of 15 W at TC=25°C. The device has a DC current gain (hFE) range of 100 to 200 for the E rank, a gain-bandwidth product of 60 MHz, and a collector-to-emitter saturation voltage of 1.0 V at IC=500 mA and IB=50 mA. It meets the standard operating temperature range of -55°C to +150°C and is intended for general electronics equipment.

Datasheet Summary
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The 2SA1773 is a PNP epitaxial planar silicon transistor designed for high-voltage driver applications, with a collector-to-emitter voltage rating of 400 V and a continuous collector current of 2 A. It is housed in a package with dimensions of 8.0 mm × 5.1 mm × 5.5 mm and features a maximum collector dissipation of 15 W at TC=25°C. The device has a DC current gain (hFE) range of 100 to 200 for the E rank, a gain-bandwidth product of 60 MHz, and a collector-to-emitter saturation voltage of 1.0 V at IC=500 mA and IB=50 mA. It meets the standard operating temperature range of -55°C to +150°C and is intended for general electronics equipment.

Suppliers

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Description
Supplier Links
 - 2SA1773E-TL-E - Rochester Electronics
Newburyport, MA, United States
Transistor for High Voltage Driver

Transistor for High Voltage Driver

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Technical Specifications

  Rochester Electronics
Product Category Transistors
Product Number 2SA1773E-TL-E
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