onsemi 2SA1523

Description
Small Signal Bipolar Transistor, 0.5A, 50V, PNP
Request a Quote
Description
Small Signal Bipolar Transistor, 0.5A, 50V, PNP
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The 2SA1523 is a PNP silicon transistor with integrated bias resistors R1=4.7kΩ and R2=4.7kΩ, designed for switching applications. It is packaged in the SPA case with dimensions of 7.0mm × 3.8mm × 1.3mm. The device has a maximum collector current of 500mA, collector-to-emitter voltage rating of 50V, and power dissipation of 300mW. The junction temperature rating is 150°C, with a storage temperature range of -55°C to +150°C. The DC current gain (hFE) ranges from 50 to 250 at IC=-20mA and VCE=-5V. The gain-bandwidth product is 250MHz. The transistor meets no specified industry standards beyond general semiconductor reliability guidelines.

Datasheet Summary
Powered by GS/AI

The 2SA1523 is a PNP silicon transistor with integrated bias resistors R1=4.7kΩ and R2=4.7kΩ, designed for switching applications. It is packaged in the SPA case with dimensions of 7.0mm × 3.8mm × 1.3mm. The device has a maximum collector current of 500mA, collector-to-emitter voltage rating of 50V, and power dissipation of 300mW. The junction temperature rating is 150°C, with a storage temperature range of -55°C to +150°C. The DC current gain (hFE) ranges from 50 to 250 at IC=-20mA and VCE=-5V. The gain-bandwidth product is 250MHz. The transistor meets no specified industry standards beyond general semiconductor reliability guidelines.

Suppliers

Company
Product
Description
Supplier Links
 - 2SA1523 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.5A, 50V, PNP

Small Signal Bipolar Transistor, 0.5A, 50V, PNP

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number 2SA1523
Polarity PNP
Unlock Full Specs
to access all available technical data