onsemi Single Bipolar Transistors 2SA1507S

Description
Bipolar (BJT) Transistor PNP 160V 1.5A 120MHz 1.5W Through Hole TO-126ML
  • Single Bipolar Transistors - 2SA1507SOS-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - 2SA1507S - 075390-2SA1507S - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SA1507S - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor PNP 160V 1.5A 120MHz 1.5W Through Hole TO-126ML
Request a Quote Datasheet

Suppliers

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Description
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Single Bipolar Transistors - 2SA1507SOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SA1507SOS-ND
Single Bipolar Transistors 2SA1507SOS-ND
Bipolar (BJT) Transistor PNP 160V 1.5A 120MHz 1.5W Through Hole TO-126ML

Bipolar (BJT) Transistor PNP 160V 1.5A 120MHz 1.5W Through Hole TO-126ML

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SA1507S - 075390-2SA1507S - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SA1507S
075390-2SA1507S
TRANSISTORS - Transistors (BJT) - Single - 2SA1507S 075390-2SA1507S
Manufacturer: ON Semiconductor Win Source Part Number: 075390-2SA1507S Packaging: Bulk Mounting: Through Hole Frequency - Transition: 120MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126ML Maximum Current Collector: 1.5A VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 500mV @ 50mA, 500mA Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 100 @ 100mA, 5V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Industrial

Manufacturer: ON Semiconductor
Win Source Part Number: 075390-2SA1507S
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 120MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126ML
Maximum Current Collector: 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 160V
Max Vce (sat): 500mV @ 50mA, 500mA
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 100 @ 100mA, 5V
Maximum Power Dissipation: 1.5W
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SA1507S - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SA1507S
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SA1507S
TRANS PNP 160V 1.5A TO126ML

TRANS PNP 160V 1.5A TO126ML

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 2SA1507SOS-ND 075390-2SA1507S 2SA1507S
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2SA1507S Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP
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