onsemi 2SA1450S-AA

PNP silicon transistor for low-frequency driver applications, rated for 80 V collector-to-emitter voltage and 500 mA collector current, with a maximum power dissipation of 600 mW and a gain-bandwidth product of 120 MHz, housed in a 3-pin TO-92 package with dimensions of 6.0 mm length, 4.0 mm width, and 1.3 mm thickness. DC current gain ranges from 100 to 400, classified as Rank S (140 to 280) for the 2SA1450S variant, with collector-to-emitter saturation voltage up to 0.5 V and junction temperature rating up to 150 °C.